Zobrazeno 1 - 10
of 15
pro vyhledávání: '"S. Akarca-Biyikli"'
Autor:
Ümit Özgür, Cole W. Litton, D. Johnstone, Kaigui Zhu, V. Avrutin, Ya. I. Alivov, S. Akarca-Biyikli, Qian Fan, Hadis Morkoç
Publikováno v:
Materials Science Forum. :1571-1574
Heteroepitaxial n-ZnO films have been grown on commercial p-type 6H-SiC substrates by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated and their photoresponse properties have been studied. Cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac6ea73583dcc0d6582d69f92de67e6a
https://doi.org/10.4028/www.scientific.net/msf.527-529.1571
https://doi.org/10.4028/www.scientific.net/msf.527-529.1571
Autor:
Hadis Morkoç, Kaigui Zhu, Necmi Biyikli, Qian Fan, Yahya Alivov, Xiao Bo, J. Q. Xie, D. Johnstone, S. Akarca-Biyikli
Publikováno v:
Journal of Electronic Materials. 35:520-524
We report on the electrical properties of ZnO films and devices grown on different substrates by radio-frequency magnetron sputtering. The films grown on c-plane sapphire were annealed in the range 800–1,000°C. The electron concentration increased
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeccc4302ec27b05a24afe097555b09a
https://doi.org/10.1007/s11664-006-0093-1
https://doi.org/10.1007/s11664-006-0093-1
Autor:
O. Lopatiuk, S. Akarca-Biyikli, Cole W. Litton, Leonid Chernyak, Yahya Alivov, Xiao Bo, D. K. Johnstone, Hadis Morkoç, Qian Fan
Publikováno v:
SPIE Proceedings.
Electrical properties of n-ZnO/n-GaN isotype heterostructures prepared by rf-sputtering of ZnO films on GaN layers which in turn grown by metal-organic vapour phase epitaxy are discussed. Current-voltage (I-V) characteristics of the n- ZnO/n-GaN diod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e0838a2c9bacb06ed5aa528f27b3eaa
https://doi.org/10.1117/12.706300
https://doi.org/10.1117/12.706300
Publikováno v:
SPIE Proceedings.
Surface profiles of deep levels in GaN sample grown by metal-organic chemical vapor deposition and by hydride vapor phase epitaxy are measured by differential deep level transient spectroscopy (DDLTS). The concentration of acceptor defects at the sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a4a63cf90ef61f552739fa1cd179984
https://doi.org/10.1117/12.653320
https://doi.org/10.1117/12.653320
Autor:
O. Lopatiuk-Tirpak, Qian Fan, Hadis Morkoç, S. Akarca-Biyikli, Ya. I. Alivov, D. Johnstone, Bo Xiao, Leonid Chernyak, W Litton
Publikováno v:
Journal of Physics: Condensed Matter. 20:085201
Electrical properties of isotype n-ZnO/n-GaN heterostructures obtained by radio-frequency sputtering of ZnO films on GaN layers are studied by means of temperature dependent current–voltage (I–V–T) characterization and electron beam induced cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b6aab901af6a14723a6b095c42f9904
https://doi.org/10.1088/0953-8984/20/8/085201
https://doi.org/10.1088/0953-8984/20/8/085201
Autor:
Erdmann Frederick Schubert, T.P. Chow, D. Johnstone, S. Akarca-Biyikli, Cole W. Litton, Jong Kyu Kim, Ishwara B. Bhat, Kodigala Subba Ramaiah
Publikováno v:
Applied Physics Letters. 88:121914
Changing the ratio of carbon to silicon during the epitaxial 4H–SiC growth is expected to alter the dominant deep level trap, which has been attributed to a native defect. The C∕Si ratio was changed from one to six during epitaxial growth of SiC.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34dfcd08f2ca85010b4c452fe90b812f
https://doi.org/10.1063/1.2161388
https://doi.org/10.1063/1.2161388
Autor:
S. Akarca-Biyikli, D. Johnstone, Erdmann Frederick Schubert, T.P. Chow, Jong Kyu Kim, Kodigala Subba Ramaiah, Ishwara B. Bhat
Publikováno v:
Journal of Applied Physics. 98:106108
High-quality Schottky junctions have been fabricated on n-type 4H SiC epitaxial layers grown by chemical-vapor deposition on C- and Si-face substrates in order to understand the effect of growth direction on the growth mechanism and formation of defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8a4fabd56f5b791b4c194279f25c17f
https://doi.org/10.1063/1.2132520
https://doi.org/10.1063/1.2132520
Autor:
D. Johnstone, Ümit Özgür, V. Avrutin, S. Akarca-Biyikli, Hadis Morkoç, Ya. I. Alivov, Qian Fan
Publikováno v:
Japanese Journal of Applied Physics. 44:7281
A series of n-ZnO/p-6H–SiC heterostructures have been grown by molecular-beam epitaxy, and electrical and optical properties of the mesa diodes have been studied. Current versus voltage (I–V) characteristics of the samples revealed a good rectify
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a74840c866b57918f901338d4ff274c
https://doi.org/10.1143/jjap.44.7281
https://doi.org/10.1143/jjap.44.7281
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Akademický článek
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