Zobrazeno 1 - 10
of 38
pro vyhledávání: '"S. A. Zavadski"'
Autor:
S. A. Zavadski, O. A. Yurtsev
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 6, Pp 5-11 (2019)
In the article the mutual coupling between radiators influence on electrical parameters of convex antenna array with doubly curved radiators placement surface is investigated. Yagi-Uda antennas are used as radiators. The integral equations method is
Externí odkaz:
https://doaj.org/article/45c42d823bfc4df3a10ce1ce16725c25
Autor:
O. A. Yurtsev, S. A. Zavadski
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 4, Pp 15-21 (2019)
Cylindrical and conical antenna arrays numerical simulation results are presented. Radiation pattern and directivity coefficient dependence from array sparseness factor is observed.
Externí odkaz:
https://doaj.org/article/4147ff93ec244f59a51ada41a7aaa5a8
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 75-80 (2019)
The results of numerical simulation of antenna array with rectangular, elliptical and octagonal aperture and uniform distribution of radiators are presented.
Externí odkaz:
https://doaj.org/article/6500c4edd5c143feb0135c6152d4f2d7
Publikováno v:
Doklady BGUIR. 20:40-47
Two-layer Al/Nb (1000/200 nm) was deposited by sputtering using a DC magnetron method on Si wafers. The anodizing was in 0.2 M oxalic solution at 53 V, re-anodized in the 0.5 M boric acid in potentiodynamic mode at increase of potential until 400 V.
Autor:
T. D. Nguyen, A. I. Zanko, D. A. Golosov, S. M. Zavadski, S. N. Melnikov, V. V. Kolos, N. К. Тоlochko
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 4, Pp 85-93 (2021)
The processes of reactive magnetron sputtering of a V target in Ar/O2 gas mixture are investigated. It was found that when using a pulsed current for sputtering and a pressure in the chamber less than 0.06 Pa, the intensities of the emission lines of
Autor:
T. D. Nguen, A. I. Zanko, D. A. Golosov, S. M. Zavadski, S. N. Melnikov, V. V. Kolos, T. Q. To
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 3, Pp 22-30 (2021)
The aim of this work was to study the effect of the parameters of deposition process and subsequent annealing on the properties of vanadium oxide VO x films deposited by the pulsed reactive magnetron sputtering of a V target in an Ar/O 2 gas mixture.
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 6, Pp 94-102 (2020)
The aim of this work was to study the effect of the gas composition during sputtering on the electrophysical properties of vanadium oxide films deposited by pulsed reactive magnetron sputtering of a vanadium target in an Ar/O2 medium of working gases
Autor:
Efim Oks, D. A. Golosov, V. A. Burdovitsin, N. A. Kananovich, N. N. Lam, Xiubo Tian, S. M. Zavadski, I. L. Pobol, S. N. Melnikov, T. D. Nguyen
Publikováno v:
Journal of Friction and Wear. 41:304-309
The mechanical and tribological characteristics of titanium–aluminum nitride films deposited by the reactive magnetron sputtering of Ti–Al mosaic targets with different aluminum concentrations were studied. The dependences of the elemental compos
Autor:
A. H. Sohrabi, N. V. Gaponenko, M. V. Rudenko, S. M. Zavadski, D. A. Golosov, A. F. Guk, V. V. Kolos, A. N. Pyatlitski, A. S. Turtsevich
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7, Pp 28-31 (2019)
The thin film capacitors were formed on silicon. The capacitor is based on the strontium titanate multi-layer which was fabricated using the sol-gel method after heat treatment at the temperature 750 or 800 °C. The lower and upper electrodes were ma
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 8, Pp 16-22 (2019)
Using nonstationary regimes electrolysis for electrodepositing silver solder bump semiconductor blocked has reduced lateral expansion of different height on the plate, to improve the qualitative characteristics of the product, increase the number of