Zobrazeno 1 - 10
of 57
pro vyhledávání: '"S. A. Teys"'
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 84:1137-1140
It is established for the first time in the physics of condensed matter that the transitions of superstructural phases on the surface of an epitaxial nanofilm can be accompanied by relaxation of misfit stresses σM. This occurs upon phase transition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e631853a89c823a588efbd83e85a420
https://doi.org/10.3103/s1062873820090348
https://doi.org/10.3103/s1062873820090348
Autor:
S. A. Teys, E. M. Trukhanov
Publikováno v:
Technical Physics Letters. 45:1144-1147
A new mechanism of misfit stress relaxation in nanofilms with variable density of surface phases is established. This phenomenon is ensured by ordered mass transfer of atoms from the strained atomic layer. The 7 × 7 → 5 × 5 phase transition in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::990c5469d0ce232725a26c5df895869e
https://doi.org/10.1134/s1063785019110282
https://doi.org/10.1134/s1063785019110282
Autor:
Vladimir G. Mansurov, Yury Galitsyn, S. A. Teys, D. S. Milakhin, Timur V. Malin, Konstantin Zhuravlev
Publikováno v:
Applied Surface Science. 571:151276
Evolution of atomic and electronic structures during high temperature Si(1 1 1) surface nitridation under ammonia flux was studied in details by the STM/STS techniques. The adsorption and intermediate phases arising at low doses preceding the (8 × 8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15229bcfc75f334f3d427f908743d16a
https://doi.org/10.1016/j.apsusc.2021.151276
https://doi.org/10.1016/j.apsusc.2021.151276
Autor:
Timur V. Malin, A. S. Kozhukhov, Ildikó Cora, E. V. Fedosenko, K. S. Zhuravlev, Béla Pécz, Yu. G. Galitsyn, Vladimir G. Mansurov, S. A. Teys
Publikováno v:
Semiconductors. 52:1511-1517
00-The kinetics of the formation and thermal decomposition of a two-dimensional SiN-(8 × 8) nitride layer on a Si(111) surface is studied. The SiN-(8 × 8) structure is a metastable intermediate phase formed during the nitridation of silicon before
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7216a5d43145001adcb23a77af47a7a
https://doi.org/10.1134/s1063782618120151
https://doi.org/10.1134/s1063782618120151
Autor:
N. A. Baidakova, S. A. Teys, A. I. Nikiforov, I. D. Loshkarev, A. R. Tuktamyshev, V. I. Mashanov, V. A. Timofeev, A. A. Bloshkin
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 20:38-44
This work deals with elastically strained GeSiSn films and GeSiSn islands. Kinetic diagram of GeSiSn growth at different lattice mismatches between GeSiSn and Si has been established. Multilayer periodic structures with pseudomorphic GeSiSn layers an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::550e88a48b5500a7f1de7ac317492c3e
https://doi.org/10.17073/1609-3577-2017-1-38-44
https://doi.org/10.17073/1609-3577-2017-1-38-44
Autor:
Vyacheslav Timofeev, S. A. Teys, A. R. Tuktamyshev, A. I. Nikiforov, V. I. Mashanov, I. D. Loshkarev, A. A. Bloshkin, Natalia A. Baidakova
Publikováno v:
Modern Electronic Materials, Vol 3, Iss 2, Pp 86-90 (2017)
This work deals with elastically strained GeSiSn films and GeSiSn islands. The kinetic diagram of GeSiSn growth for different lattice mismatches between GeSiSn and Si has been drawn. The multilayered periodic structures with pseudomorphic GeSiSn laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3cebd586944c9cfbfffd12d272b9e32
http://www.sciencedirect.com/science/article/pii/S2452177917300610
http://www.sciencedirect.com/science/article/pii/S2452177917300610
Autor:
S. A. Teys
Publikováno v:
JETP Letters. 105:477-483
New detailed scanning tunneling microscopy images of the superstructure on an atomically clean Si(133)-6 × 2 surface are obtained. Similarities and differences with previously reported images are discussed. On the basis of these data, a new atomic m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::236d932f974599af4a08725d15d0f2db
https://doi.org/10.1134/s0021364017080136
https://doi.org/10.1134/s0021364017080136
Autor:
O. M. Borodavchenko, A. F. Zinovieva, A. V. Nenashev, V. D. Zhivulko, S. A. Teys, Vladimir Zinovyev, A. V. Mudryi, A. V. Dvurechenskii
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
The photoluminescence (PL) of the combined Ge/Si structures representing a combination of large (200–250 nm) GeSi disk-like quantum dots (nanodisks) and four-layered stacks of compact groups of smaller (30 nm) quantum dots grown in the strain field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38dd3dcecb6f4db510440f367663f39f
https://pubmed.ncbi.nlm.nih.gov/32518243
https://pubmed.ncbi.nlm.nih.gov/32518243
The ordered arrays of Ag nanowires and nanodots have been grown in ultra-high vacuum on the Si(5 5 7) surface containing regular steps of three bilayer height. Formation of Ag nanostructures have been studied by scanning tunneling microscopy, low ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d90d698288d56fe77107dc40437f035e
http://arxiv.org/abs/1903.07081
http://arxiv.org/abs/1903.07081
