Zobrazeno 1 - 10
of 11
pro vyhledávání: '"S. A. Tachilin"'
Publikováno v:
Technical Physics Letters. 48:1-4
Autor:
S. B. Isamov, S. A. Tachilin, M. K. Bakhadyrkhanov, G. Kh. Mavlonov, Kh. M. Iliev, K. S. Ayupov
Publikováno v:
Technical Physics. 64:385-388
Photosensitivity of the negative magnetoresistance (NMR) of silicon containing magnetic nanoclusters of manganese atoms is revealed under background and IR (up to λ = 3 μm) irradiation at room temperature. It is shown that irradiation leads to a si
Autor:
E. B. Saitov, N. F. Zikrillaev, S. A. Tachilin, S. V. Koveshnikov, M. K. Bakhadyrkhanov, S. A. Valiev
Publikováno v:
Applied Solar Energy. 52:278-281
This article considers the technology of fabricating clusters of nickel atoms in a silicon crystalline lattice with controlled parameters. Silicon solar cells with clusters of nickel atoms have been fabricated and their parameters determined. It has
Autor:
G. Kh. Mavlonov, M. K. Bakhadyrkhanov, Kh. M. Iliev, S. B. Isamov, Z.M. Saparniyazova, K. S. Ayupov, S. A. Tachilin
Publikováno v:
Inorganic Materials. 47:479-483
We have studied the transport properties of silicon doped with manganese via low-temperature diffusion. The material exhibits colossal photoconductivity in the extrinsic region (1.5–3 μm), an abnormally high negative magnetoresistance, and a tempe
Silicon-based photocells of enhanced spectral sensitivity with nano-sized graded band gap structures
Publikováno v:
Applied Solar Energy. 50:61-63
Photoelectric properties of monocrystalline silicon with multiply charged nanoclusters are studied that generate “silicon clusters,” i.e., nano-sized graded band gap structures. Multiply charged nanoclusters of manganese atoms strongly influence
Autor:
K. S. Ayupov, S. A. Tachilin, G. Kh. Mavlonov, O. E. Sattarov, M. K. Bakhadyrkhanov, Kh. M. Iliev, S. B. Isamov
Publikováno v:
Surface Engineering and Applied Electrochemistry. 46:276-280
The features of the photoelectric properties of silicon with multicharged nanoclusters of manganese atoms are studied. The patterns of change in the multiplicity of the charge state of the nanoclusters as a function of the Fermi level position are de
Publikováno v:
Russian Microelectronics. 41:169-171
It was found that annealing germanium-doped single-crystal silicon at 850°C leads to the formation of internal Si-SiGe-Si microheterojunctions, which increase at an efficiency of 2.5% of solar cells fabricated on its basis.
Publikováno v:
Applied Solar Energy. 48:55-57
It has been shown that on the base of silicon with multicharged nanoclusters of magnesium atoms it is possible to create more sensitive quantometers of IR radiation with high resolution, particularly in the IR spectrum of solar radiation. The quantum
Publikováno v:
Surface Engineering and Applied Electrochemistry. 46:505-507
Publikováno v:
Surface Engineering and Applied Electrochemistry. 43:505-507
The results of studies and working out and creation of a thermosensor on the basis of highly compensated silicon doped with Mn and S are presented in this work. It is stated that the thermosensitivity and the stability of the parameters of the worked