Zobrazeno 1 - 10
of 1 000
pro vyhledávání: '"S. A. Simeonov"'
Publikováno v:
IEEE Transactions on Electron Devices. 59:1738-1744
The statistical variability of the static noise margin of a six-transistor bulk complementary metal-oxide-semiconductor static random access memory (SRAM) cell due to random doping fluctuations (RDFs) is investigated via 3-D technology computer-aided
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ceaa218f58e9e53695509852d8a0711
https://doi.org/10.1109/ted.2012.2189860
https://doi.org/10.1109/ted.2012.2189860
Autor:
Zhiqiang Tan, U von Matt, Andrey B. Kucherov, Pratheep Balasingam, K. El Sayed, I. Avci, M. D. Johnson, B. Polsky, A R Saha, S. Tian, S. D. Simeonov, Luis Villablanca, E. Lyumkis
Publikováno v:
IEEE Transactions on Electron Devices. 58:1189-1196
In this paper, we study the impacts of proximity effects on the electrical characteristics Id-Vg and the static noise margin of a six-transistor (6T) bulk complementary metal-oxide-semiconductor (MOS) static random access memory (SRAM) cell using 3-D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e2c42920a0194c524046d1970177267
https://doi.org/10.1109/ted.2011.2109003
https://doi.org/10.1109/ted.2011.2109003
Autor:
Knani, Sarra1 (AUTHOR), Tauk, Myriam1 (AUTHOR), Hajjar, Perla1 (AUTHOR), Lacour, Marie‐Agnès2 (AUTHOR), Shahrokhi, Masoud3 (AUTHOR), Canaff, Christine4 (AUTHOR), Morais, Cláudia4,5 (AUTHOR), Morisset, Sophie4 (AUTHOR), Huguet, Patrice1,5 (AUTHOR), Cot, Didier1 (AUTHOR), Rebiere, Bertrand3 (AUTHOR), Oliviero, Erwan3,6 (AUTHOR), Bonniol, Valerie1 (AUTHOR), Cambedouzou, Julien1,5 (AUTHOR), Bechelany, Mikhael1,7 (AUTHOR), Tingry, Sophie1,5 (AUTHOR), Kokoh, Kouakou Boniface4,5 (AUTHOR), Napporn, Teko Wilhelmin4,5 (AUTHOR), Guesmi, Hazar3,5 (AUTHOR) hazar.guesmi@enscm.fr, Cornu, David1,5 (AUTHOR)
Publikováno v:
Small Structures. Nov2024, Vol. 5 Issue 11, p1-21. 21p.
Autor:
AYTAÇ, SERTAN1 saytac@ahievran.edu.tr
Publikováno v:
Journal of the Serbian Chemical Society. 2024, Vol. 89 Issue 10, p1285-1298. 14p.
Autor:
E Kafedjiiska, S S Simeonov
Publikováno v:
Semiconductor Science and Technology. 12:1016-1027
I - V forward current characteristics of Si Schottky diodes are measured in the 80 - 291 K temperature range. The apparent decrease of the electron barrier height at the metal - semiconductor (M - S) interface, , and the increase of the ideality fact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::707a8ad2f5e546cd7d9745564529301f
https://doi.org/10.1088/0268-1242/12/8/015
https://doi.org/10.1088/0268-1242/12/8/015
Publikováno v:
JOM. 49:48-52
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c29ef2fc2e3a3306698fe2c27e5c964
https://doi.org/10.1007/bf02914876
https://doi.org/10.1007/bf02914876
Publikováno v:
Metallurgical and Materials Transactions B. 28:191-200
A relationship between copper in slag and copper in matte during copper sulfide smelting has been derived using industrial data from 42 plants employing blast furnaces, reverberatory furnaces, flash furnaces, and Mitsubishi smelting furnaces together
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0687e3ea174b542a3378286f7b60f896
https://doi.org/10.1007/s11663-997-0084-5
https://doi.org/10.1007/s11663-997-0084-5
Autor:
Zudian Qin, Mankoo Lee, S. D. Simeonov, K. El Sayed, I. Avci, Yong-Seog Oh, Pratheep Balasingam, Dipu Pramanik
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
A physically based simulation methodology provides fast and practical EM lifetime prediction. We identified an “EM-aware” region to define the length dependence of Cu-lines under high current stress. For eventual calibration of 2× nm node Cu-lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::267088c8c04e5a02dab0cc8c102269f1
https://doi.org/10.1109/irps.2013.6532079
https://doi.org/10.1109/irps.2013.6532079
Autor:
K. El-Sayed, I. Avci, W. Zhou, Yong-Seog Oh, Pratheep Balasingam, M. Zhu, Andrey B. Kucherov, Zudian Qin, M. D. Johnson, S. D. Simeonov, S. Tian, B. Polsky, V. Chawla, B. Mishra, Xiaopeng Xu, S. Li
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
The reliability of complex interconnect structures at all levels of the chip integration hierarchy has become a major concern due to the use of fine feature sizes, diverse materials, and complex 3D architectures. Reliability issues range from stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02a2d49097020e1178e553a865ff19ef
https://doi.org/10.1109/iitc.2012.6251575
https://doi.org/10.1109/iitc.2012.6251575