Zobrazeno 1 - 10
of 12
pro vyhledávání: '"S. A. Safvi"'
Publikováno v:
Journal of Applied Physics. 82:5352-5359
A numerical model describing the spatial resolution limitations on localized band edge photoluminescence (PL) and trap-based luminescence, obtained through near-field scanning optical microscopy (NSOM), is presented. Calculations were carried out for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d56345b187f5f3296f50c13b0c47ca0
https://doi.org/10.1063/1.366303
https://doi.org/10.1063/1.366303
Publikováno v:
Journal of The Electrochemical Society. 144:1789-1796
A model for the growth of gallium nitride in a vertical metallorganic vapor phase epitaxy (MOVPE) reactor is presented and compared to experimental growth rate measurements. For a mixture of nondilute gases, the flow, temperature, and concentration p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8b6b49e1d34713b7c2b7a6bb2a12114
https://doi.org/10.1149/1.1837681
https://doi.org/10.1149/1.1837681
Publikováno v:
Journal of The Electrochemical Society. 144:1127-1130
Trimethylamine has been used in the growth of compound semiconductors either through the formation of an adduct, as in trimethylamine allane, or as a possible growth reactant. The kinetics of the gas-phase decomposition and dominant reaction products
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d1942d3c34ad7fc1ab1c02163331aa0
https://doi.org/10.1149/1.1837543
https://doi.org/10.1149/1.1837543
Publikováno v:
Journal of The Electrochemical Society. 144:732-736
A study of the long-term stability of etching, photowashing, and sulfide passivation [using (NH 4 ) 2 S] treatments performed on GaAs surfaces using photoreflectance spectroscopy is reported in this paper. Dramatic changes in the intensity of exciton
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beb853c77260ef1032f8f9ce5653dca1
https://doi.org/10.1149/1.1837476
https://doi.org/10.1149/1.1837476
Publikováno v:
AIChE Journal. 40:1535-1548
A new counterflow jet reactor has been designed to study the purely homogeneous kinetics of endothermic reactions. The reactor consists of two vertical, coaxial, counterflowing, laminar jets and radial-flow exit region. It can be used to generate a r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4342d38a25399c7fb92863c1386459a
https://doi.org/10.1002/aic.690400912
https://doi.org/10.1002/aic.690400912
Autor:
N. R. Perkins, Ling Zhang, S. A. Safvi, Rong Zhang, D. M. Hansen, Kevin L. Bray, Thomas F. Kuech
Publikováno v:
Applied Physics Letters. 72:1244-1246
The photoluminescence of in situ-doped GaN:Er during hydride vapor phase epitaxy was compared to an Er-implanted GaN sample. At 11 K, the main emission wavelength of the in situ-doped sample is shifted to shorter wavelengths by 2.5 nm and the lifetim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f0bf82ba53c5212d6984cf3dbe81b81
https://doi.org/10.1063/1.121034
https://doi.org/10.1063/1.121034
Autor:
B.R. Preston, N. Pauly, Dovas A. Saulys, Thomas F. Kuech, Donald F. Gaines, J.A. Dopke, S. A. Safvi
Publikováno v:
MRS Proceedings. 447
The reliance of the semiconductor industry on pyrophoric silane gas as the primary source of silicon entails high risk and attendant cost. In order to enhance safety and improve control we are engaged in a systematic study of the decomposition charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1bac04264258fa8f2b68506c51e4181
https://doi.org/10.1557/proc-447-139
https://doi.org/10.1557/proc-447-139
Publikováno v:
MRS Proceedings. 423
The use of trimethylgallium-trimethylamine (TMG:TMN) adduct as alternative cation precursor for MOVPE of GaN was studied by means of in-situ mass spectroscopy in an isothermal flow tube reactor. The temperature, pressure and reaction time were chosen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff09ed5712b5f46194e3932dda9e3d32
https://doi.org/10.1557/proc-423-445
https://doi.org/10.1557/proc-423-445
Publikováno v:
MRS Proceedings. 449
The effects of flowrate variation and geometry on the growth rate, growth uniformity and crystal quality were investigated in a horizontal Gallium Nitride vapor phase epitaxy reactor. To better understand the effects of these parameters, numerical mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5beebba54f31cb467bb1c3d8c8a508fd
https://doi.org/10.1557/proc-449-289
https://doi.org/10.1557/proc-449-289
Publikováno v:
MRS Proceedings. 423
A numerical model of an experimental gallium nitride horizontal vapor phase epitaxy reactor is presented. The model predicts the flow, concentration profiles, and growth rates. The effects of flowrate variation and geometry on the growth rate, growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d351ad91cc90c4f20ca701e49b2410ef
https://doi.org/10.1557/proc-423-227
https://doi.org/10.1557/proc-423-227