Zobrazeno 1 - 1
of 1
pro vyhledávání: '"S. A. Muravov"'
Publikováno v:
Journal of Measurements in Engineering, Vol 1, Iss 1, Pp 23-27 (2013)
In recent years, intensive development of field-effect transistors on metal-ferroelectric-semiconductor for use, as non-volatile memory elements. The principle of operation of these devices is as follows. Ferroelectric film contains a large number of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::7a84b27e8c034836c0f20f51e270b55f
https://www.jvejournals.com/article/10004
https://www.jvejournals.com/article/10004
