Zobrazeno 1 - 5
of 5
pro vyhledávání: '"S. A. Mokrushina"'
Autor:
S. A. Mokrushina, N. M. Romanov
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 23, Iss 1, Pp 30-40 (2020)
Introduction. Electromagnetic or ionizing radiation (IO) has great influence for radiation resistance of MOSFETs (metal–oxide–semiconductor field-effect transistors) and integrated circuits. Oxide, for the studied samples, is silicon dioxide, whi
Externí odkaz:
https://doaj.org/article/2d0b47d96bf145afb75f6fe0d2958d04
Publikováno v:
Аграрная наука Евро-Северо-Востока, Vol 25, Iss 5 (2024)
In order to grow high-quality seed potatoes more efficiently, it is necessary constantly to improve cultivation technologies and accelerated reproduction of in vitro material under aseptic conditions. During the research it has been established that
Externí odkaz:
https://doaj.org/article/43ec6d6a3020405090de4d86b5f4ec7e
Publikováno v:
Semiconductors. 56:160-163
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94cd54bccd6a0b5f02ba38448b09b1ad
https://doi.org/10.1134/s1063782622020038
https://doi.org/10.1134/s1063782622020038
Autor:
S. A. Mokrushina, O. V. Aleksandrov
Publikováno v:
Semiconductors. 54:240-245
A new quantitative model of the effect of the gate bias on the threshold voltage of metal-oxide-semiconductor (MOS) structures under ionizing irradiation is developed based on the consideration of hole trapping from the entire volume of the gate diel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::875673956f411620e4bde3a5eddd537e
https://doi.org/10.1134/s1063782620020025
https://doi.org/10.1134/s1063782620020025
Autor:
O. V. Aleksandrov, S. A. Mokrushina
Publikováno v:
Semiconductors. 52:783-788
A quantitative model for charge accumulation in an undergate dielectric during tunneling electron injection from a gate according to the Fowler–Nordheim mechanism is developed. The model takes into account electron and hole capture at hydrogen-free
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe835ba7daa2e47a61cc995b66bce18
https://doi.org/10.1134/s1063782618060027
https://doi.org/10.1134/s1063782618060027