Zobrazeno 1 - 10
of 85
pro vyhledávání: '"S. A. Kochubei"'
Publikováno v:
Instruments and Experimental Techniques. 65:903-909
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::958f6679a720007fdc9a4e023f2c3816
https://doi.org/10.1134/s0020441222060033
https://doi.org/10.1134/s0020441222060033
Publikováno v:
Journal of Experimental and Theoretical Physics. 133:389-395
Experimental data have been obtained for the relaxation rates of population, orientation, and alignment of the 174Yb(6s6p)3P1 level due to collisions of 174Yb atoms with atoms of noble gases.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d7a1cc94f7bf4ddb542618db6841535
https://doi.org/10.1134/s1063776121100101
https://doi.org/10.1134/s1063776121100101
Publikováno v:
Journal of Experimental and Theoretical Physics. 129:812-815
The nonmonotonic kinetics of a collision-induced photon echo has been investigated for a number of buffer atoms. The collision-induced photon echo was generated at the 174Yb (6s2) 1S0 ↔ (6s6p) 3P1 (0 ↔ 1) transition by a pair of linearly and mutu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0df5efc7acb78c7508e6e3b5c0e9f65d
https://doi.org/10.1134/s1063776119110165
https://doi.org/10.1134/s1063776119110165
Autor:
A. S. Bogomolov, Alexey V. Baklanov, V. G. Gol’dort, A. P. Pyryaeva, A. V. Demyanenko, S. A. Kochubei
Publikováno v:
Instruments and Experimental Techniques. 62:252-255
A broadband near-IR photodetector based on a large-area G12180-250A InGaAs photodiode (Hamamatsu) with a 5-mm-diameter photosensitive area was developed and tested. It is designed for detecting the IR luminescence of singlet oxygen. A circuit for sig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::042a3c737ee55d17e87987e86839a75b
https://doi.org/10.1134/s0020441219010068
https://doi.org/10.1134/s0020441219010068
Autor:
S. A. Kochubei, K. S. Zhuravlev, N. N. Rubtsova, V. G. Gol’dort, A. A. Kovalyov, G. M. Borisov, D. V. Ledovskikh, T. V. Malin
Publikováno v:
Siberian Journal of Physics. 13:64-69
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::261109737d1a4504bf3f68aa0c0685fb
https://doi.org/10.25205/2541-9447-2018-13-2-64-69
https://doi.org/10.25205/2541-9447-2018-13-2-64-69
Publikováno v:
Laser Physics Letters. 18:056001
For the first time, a complete set of decay parameters, due to collisions of 174Yb atoms with noble gas atoms and with ytterbium atoms, was experimentally found for the 174Yb (6s6p) 3P1 level. The method of stimulated photon echo with special angles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83172ca98a6a90e47345a4a5c930e7d0
https://doi.org/10.1088/1612-202x/abef01
https://doi.org/10.1088/1612-202x/abef01
Autor:
Jiri Stuchlik, Igor G. Neizvestny, G. K. Krivyakin, A. V. Dvurechenskii, Vladimir A. Volodin, S. A. Kochubei, Alexander A. Shklyaev
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 52:496-500
The phase and elemental compositions of GeSi heterostructures deposited on non-refractory substrates are analyzed by using a non-destructive express technique, i.e., the Raman spectroscopy. It is shown that application of pulsed laser annealing allow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b365e165b94d2fb3ec71f69304492df1
https://doi.org/10.3103/s8756699016050113
https://doi.org/10.3103/s8756699016050113
Autor:
Radek Fajgar, T. H. Stuchliková, A. Purkrt, G. N. Kamaev, Jiri Stuchlik, S. A. Kochubei, Vladimir A. Volodin, Z. Remes, G. K. Krivyakin
Publikováno v:
Semiconductors. 50:935-940
Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05f87edaff0e601f8c3e13319c9ade81
https://doi.org/10.1134/s1063782616070101
https://doi.org/10.1134/s1063782616070101
Publikováno v:
Solid State Communications. 313:113897
Raman scattering spectroscopy is powerful, express and non-destructive method for control of phase composition of different materials. To determine the crystalline part, one should know the ratio of Raman cross sections of crystalline to amorphous ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::787bb957df378aeab8979680a32c2b0f
https://doi.org/10.1016/j.ssc.2020.113897
https://doi.org/10.1016/j.ssc.2020.113897
Publikováno v:
Laser Physics. 29:124002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d863c43a23358c5e3a34aa11963ff425
https://doi.org/10.1088/1555-6611/ab4bd1
https://doi.org/10.1088/1555-6611/ab4bd1