Zobrazeno 1 - 10
of 27
pro vyhledávání: '"S. A. Khorev"'
Publikováno v:
2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
Locking of a spectrum of a microresonator to the wavelength of a pumping laser is crucial to many applications, for instance in optical frequency comb generation [1] . A common approach is to utilise thermal locking that occurs due to energy dissipat
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 53:103-113
This paper presents a new concept for the study of spatio-temporal generation regimes in which several time scales coexist in the radiation (one of which is related to the cavity round-trip time). The essence of the concept is that the time dependenc
Autor:
Sergey I. Kablukov, Ivan A. Lobach, Dmitry V. Churkin, Srikanth Sugavanam, S. V. Khorev, Simon J. Fabbri, Son Thai Le
Publikováno v:
Scientific Reports
Conventional tools for measurement of laser spectra (e.g. optical spectrum analysers) capture data averaged over a considerable time period. However, the generation spectrum of many laser types may involve spectral dynamics whose relatively fast time
Autor:
S. V. Khorev
Publikováno v:
Chemical and Petroleum Engineering. 40:556-559
Autor:
S V Khorev, S. A. Babin
Publikováno v:
Quantum Electronics. 33:798-802
The parameters of a high-current krypton discharge in tubes of an increased diameter (5 — 7 mm) are studied and optimised. Increased lasing power on the lines of singly and doubly charged krypton ions is achieved: 14 W (647 — 676 nm) and 6 W (407
Autor:
Srikanth Sugavanam, S. Thai Le, Sergey I. Kablukov, Dmitry V. Churkin, Simon J. Fabbri, S. V. Khorev, Ivan A. Lobach
Publikováno v:
CLEO: 2015.
We present a method to measure in real-time the instantaneous generation spectrum of fiber lasers over consecutive cavity round-trips.
Autor:
S. A. Khorev, N. I. Bochkareva
Publikováno v:
Semiconductors. 34:1177-1182
The effect of low-temperature electron charge redistribution at the Si/SiO2 interface between the interphase states and the conduction band of an n-Si crystal on the temperature behavior of conductance, photovoltage, and photocurrent in Si barrier st
Autor:
N. I. Bochkareva, S. A. Khorev
Publikováno v:
Semiconductors. 33:1212-1215
The behavior of the electron density at the Si/SiO2 interface with temperature is investigated by measuring the rf conductivity of band-edge surface electronic channels that shunt Schottky barriers in n-type Si. The results are explained within a mod
Autor:
S V Khorev, S. A. Babin
Publikováno v:
Quantum Electronics. 29:324-328
The use of a Fabry — Perot etalon in selection of longitudinal cavity modes was investigated. It was found that a Fabry — Perot etalon may be used for such selection in cavities with a convex mirror without tilting the etalon relative to the cavi
Autor:
Dmitry V. Churkin, Sergey I. Kablukov, S. V. Khorev, Simon J. Fabbri, Son Thai Le, Ivan A. Lobach, Srikanth Sugavanam
Publikováno v:
Scopus-Elsevier
We report high-resolution real-time measurements of spectrum evolution in a fibre. The proposed method combines optical heterodyning with a technique of spatio-temporal intensity measurements revealing fast spectral dynamics of cavity-based systems.