Zobrazeno 1 - 9 of 9 pro vyhledávání: '"S. A. Kapilin"'
1
The ALD Films of Al2O3, SiNx, and SiON as Passivation Coatings in AlGaN/GaN HEMT
Autor: Yu. V. Kolkovsky, K. L. Enisherlova, S. A. Kapilin, B. K. Medvedev, E. M. Temper
Publikováno v: Russian Microelectronics. 49:603-611
In the field-effect transistors based on the wide-band-gap nitride heterostructures, the dielectric layers are in widespread use as one of the main elements in the active regions of the devices and the passivation layers. Stringent requirements are i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::73803108de739140143c5b1bb4d827f4
https://doi.org/10.1134/s106373972008003x
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4
The Effect of Defects with Deep Levels on the C–V Characteristics of High-Power AlGaN/GaN/SiC HEMTs
Autor: E. A. Bobrova, Yu. V. Kolkovskii, K. L. Enisherlova, E. M. Temper, S. A. Kapilin
Publikováno v: Russian Microelectronics. 48:28-36
This study deals with the capacity–voltage (С–V) characteristics of the gate–drain regions of crystals of high-power microwave HEMT transistors with a large gate periphery of the S and Х bands and a source–drain breakdown voltage VDS rangin
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1e7bb9b59ffd76c7b45a62fa3f08a15b
https://doi.org/10.1134/s1063739719010049
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5
Influence of the Parameters of Schottky Barriers of AlGaN/GaN/SiC HEMT Transistors on the Phase Noise of Microwave Generators
Autor: Yu. V. Kolkovsky, S. A. Kapilin, N. V. Davydov, V. V. Gruzdov, K. L. Enisherlova
Publikováno v: Russian Microelectronics. 47:526-531
Microwave HEMT transistors based on gallium nitride (a novel wide-band-gap material) allow us to construct advanced radioelectronic systems. Therefore, the determination of the relation between the parameters of the transistor structure and the chara
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d9a89a187b95c7d1119c1b3248175e23
https://doi.org/10.1134/s106373971807003x
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6
The Instability of the CV Characteristics’ Capacitance When Measuring AlGaN/GaN-Heterostructures and the HEMT-Transistors Based on Them
Autor: V. G. Goryachev, K. L. Enisherlova, V. G. Saraykin, S. A. Kapilin
Publikováno v: Russian Microelectronics. 46:591-599
AlGaN/GaN heterostructures and AlGaN/GaN/SiC HEMT-transistors’ Schottky barriers (SBs) are studied by the capacitance–voltage (CV) method and the SIMS method in order to determine the causes of the capacitance instability in some cases. It is sho
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0f18631c270da95cc8600628a9b20621
https://doi.org/10.1134/s1063739717080066
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8
The instability of the CV characteristics capacitance when measuring AlGaN/GaN–heterostructures and the HEMT–transistors based on them
Autor: V. G. Goryachev, K. L. Enisherlova, V. G. Saraykin, S. A. Kapilin
Publikováno v: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 19:115-123
A complex of studies of the AlGaN/GaN heterostructures and the AlGaN/GaN/SiC HEMT-transistors Schottky barriers has been carried out by the C-V method and the SIMS method in order to determine the causes of the capacitance instability in some cases w
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9f93e22763c1e7aea9bd17ea3a222c92
https://doi.org/10.17073/1609-3577-2016-2-115-123
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9
Influence of the silicon layer’s properties on the capacitance parameters of MIS/SOS structures
Autor: K. L. Enisherlova, V. G. Goryachev, S. A. Kapilin, E. M. Temper
Publikováno v: Russian Microelectronics. 44:537-545
The influence of the silicon epitaxial layer’s peculiarities and the silicon–sapphire interface in the silicon-on-sapphire (SOS) structure on the capacitance parameters of MIS-structures formed on SOS with submicron layers of silicon has been stu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::441e73fc1f0dda9ef53060c8cb1f2af4
https://doi.org/10.1134/s106373971508003x
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