Zobrazeno 1 - 10
of 144
pro vyhledávání: '"S. A. Dvoretsky"'
Autor:
G. J. Ferreira, D. R. Candido, F. G. G. Hernandez, G. M. Gusev, E. B. Olshanetsky, N. N. Mikhailov, S. A. Dvoretsky
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-13 (2022)
Abstract Quantum wells formed by layers of HgTe between Hg $$_{1-x}$$ 1 - x Cd $$_x$$ x Te barriers lead to two-dimensional (2D) topological insulators, as predicted by the BHZ model. Here, we theoretically and experimentally investigate the characte
Externí odkaz:
https://doaj.org/article/003bb4f4237a4d94ad76a546228a05ae
Autor:
A. S. Kazakov, A. V. Galeeva, A. I. Artamkin, A. V. Ikonnikov, L. I. Ryabova, S. A. Dvoretsky, N. N. Mikhailov, M. I. Bannikov, S. N. Danilov, D. R. Khokhlov
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
Abstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostr
Externí odkaz:
https://doaj.org/article/82a6e98253ee48408b0179fd04729b2a
Autor:
A. S. Kazakov, A. V. Galeeva, A. I. Artamkin, A. V. Ikonnikov, L. I. Ryabova, S. A. Dvoretsky, N. N. Mikhailov, M. I. Bannikov, S. N. Danilov, D. R. Khokhlov
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract We report on observation of strong non-local photoconducitivity induced by terahertz laser pulses in non-zero magnetic field in heterostructures based on Hg1−x Cd x Te films being in the topological phase. While the zero-field non-local ph
Externí odkaz:
https://doaj.org/article/adf33367841b42fe8d92c092dde4ce50
Autor:
A. A. Razova, V. V. Utochkin, M. A. Fadeev, V. V. Rumyantsev, A. A. Dubinov, K. E. Kudryavtsev, D. V. Shengurov, E. E. Morozova, E. V. Skorohodov, N. N. Mikhailov, S. A. Dvoretsky, V. I. Gavrilenko, S. V. Morozov
Publikováno v:
Journal of Applied Spectroscopy. 89:844-848
Autor:
А. А. Razova, V. V. Utochkin, M. A. Fadeev, V. V. Rumyantsev, A. A. Dubinov, K. E. Kudryavtsev, D. V. Shengurov, E. E. Morozova, E. V. Skorohodov, N. N. Mikhailov, S. A. Dvoretsky, V. I. Gavrilenko, S. V. Morozov
Publikováno v:
Journal of Applied Spectroscopy. 89:632-637
The first results on the study of photoluminescence and lasers radiation spectra of a CdHgTe solid solution-based quantum well structure with microdisk cavities of different diameters are demonstrated. It is shown that the presence of cavities contri
Autor:
M. V. Yakunin, V. Ya. Aleshkin, S. M. Podgornykh, V. N. Neverov, M. R. Popov, N. N. Mikhailov, S. A. Dvoretsky
Publikováno v:
JETP Letters. 116:385-393
We report on systematic study of transport properties of a 1000 nm HgTe film. Unlike thinner and strained HgTe films, which are known as high-quality three-dimensional topological insulators, the film under study is much thicker than the limit of pse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d41cb42f9d6d34aca619eb74088098b4
http://arxiv.org/abs/2302.04010
http://arxiv.org/abs/2302.04010
Autor:
S. V. Sazonova, E. I. Ageev, V. A. Iudin, Y. Sun, E. A. Petrova, P. N. Kustov, V. V. Yaroshenko, J. V. Mikhailova, A. S. Gudovskikh, I. S. Mukhin, D. A. Zuev, M. S. Ryzhkov, D. A. Khudaiberdiev, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, P. V. Dolganov, V. K. Dolganov, E. I. Kats, V. Sakhin, E. Kukovitsky, Y. Talanov, G. Teitel’baum, L. Morgun, A. Borisov, A. Usoltsev, V. Pudalov
Publikováno v:
JETP Letters. 116:589-591
An Erratum to this paper has been published: https://doi.org/10.1134/S0021364022340045
Autor:
A. S. Bogoliubskii, S. V. Gudina, V. N. Neverov, K. V. Turutkin, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky
Publikováno v:
Physics of the Solid State. 64:107-117
Autor:
M. S. Ryzhkov, D. A. Khudaiberdiev, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky
Publikováno v:
JETP Letters. 115:202-207
The transport response of a CdHgTe quantum well with a thickness of 11.5 nm is investigated. The behavior of the local and nonlocal resistance in the temperature range from 0.1 to 20 K is examined. It is shown that the system under study is a two-dim