Zobrazeno 1 - 10
of 24
pro vyhledávání: '"S. A. Bouzid"'
Publikováno v:
IEEE Access, Vol 8, Pp 105793-105814 (2020)
In high-density wireless sensor networks, the quality of service in terms of sensing coverage, connectivity, lifetime, energy consumption and cost is closely linked to the position of the nodes in the network. Consequently, the placement of a large n
Externí odkaz:
https://doaj.org/article/3d3e6c6a82ce40348cbbd5492e36205a
Autor:
W. Zaghdoudi, N. Ben Sedrine, S. Ben Bouzid, Radhouane Chtourou, Jean-Christophe Harmand, F. Bousbih, A. Hamdouni
Publikováno v:
Applied Surface Science. 254:7122-7126
We study the effect of the GaAsN narrow QWs on the optical properties of the GaInNAsSb/GaAs QWs using photoluminescence spectroscopy. A drastic effect of the N-rich layers on the QW photoluminesecnec (PL) intensity was observed with a strong influenc
Autor:
S. Ben Bouzid, A. Hamdouni, Jean-Christophe Harmand, F. Bousbih, Radhouane Chtourou, S. Aloulou
Publikováno v:
Materials Science and Engineering: C. 28:816-819
We study the effect of nitrogen content in modulation-doped GaAs/GaAs1 − xNx/GaAs/GaAlAs:(Si) quantum well using low-temperature photoluminescence spectroscopy. The samples were grown on GaAs (001) substrates by molecular-beam epitaxy with differen
Autor:
F. Bousbih, A. Hamdouni, Radhouane Chtourou, N. Ben Sedrine, J. Rihani, Jean-Christophe Harmand, S. Ben Bouzid
Publikováno v:
American Journal of Applied Sciences. 4:19-22
The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a rad
Publikováno v:
Cell and Tissue Banking. 8:9-12
The validation and substantiation of sterilization dose for lyophilized human amnion membrane by gamma irradiation delivered by Co60 source were investigated. The validation experiments were conducted according to ISO 13409 method B. A total of 120 h
Autor:
Meherzi Oueslati, F. Bousbih, Jean-Christophe Harmand, S. Ben Bouzid, Radhouane Chtourou, A. Hamdouni
Publikováno v:
Materials Science and Engineering: B. 123:154-157
We report a low-temperature photoluminescence spectra (LTPL) of GaAs1−xNx layers and two-dimension electron gas (2DEG) GaAs1−xNx/AlGaAs modulation doped heterostructure grown on GaAs substrates by molecular beam epitaxy (MBE) with low nitrogen co
Autor:
F. Bousbih, Radhouane Chtourou, Paul Voisin, S. Ben Bouzid, Jean-Christophe Harmand, A. Hamdouni
Publikováno v:
American Journal of Applied Sciences. 2:1370-1374
We have investigated photocurrent (PC) and photoluminescence (PL) in sequentially grown GaInNAs/GaAs and GaInNAs(Sb)/GaAsSbN quantum wells. Photocurrent transitions are analyzed by theoretical calculations using envelope function formalism taking int
Autor:
S. Ben Bouzid, Hélène Carrère, Thierry Amand, Vincent Sallet, Xavier Marie, J. Barrau, Jean-Christophe Harmand
Publikováno v:
IEE Proceedings - Optoelectronics. 151:402-406
The authors have calculated the band structure of 1.3-μm InGaAsN/GaAs(N)/GaAs compressively strained quantum wells (QW) using the band anticrossing model and an eight-band k.p Hamiltonian. The calculated interband optical transition energies have be
Excitons bound to nitrogen complexes in heavily doped GaAs1−xNx grown on GaAs misoriented substrates
Publikováno v:
Materials Science and Engineering: B. 112:50-53
Dilute GaAs 1− x N x alloys were grown by molecular beam epitaxy on (0 0 1)-oriented GaAs substrates and misoriented 2° towards (1 1 0) with two Ga and As atoms, in the same plane terminated with single Ga and As bonds, respectively. Photoluminesc
Publikováno v:
Materials Science and Engineering: B. 112:64-68
We have performed spectroscopic measurements in order to investigate the exciton localization mechanism and the bandgap energies of GaAsN in three regimes: (i) doped; (ii) intermediate doped-alloy; and (iii) alloy and the transition energies in strai