Zobrazeno 1 - 10
of 20
pro vyhledávání: '"S. A. Bereznaya"'
Autor:
S. A. Bereznaya, D. A. Kobtsev, S. Yu. Sarkisov, R. A. Redkin, Z. V. Korotchenko, V. A. Novikov
Publikováno v:
Russian physics journal. 2021. Vol. 63, № 9. P. 1504-1509
GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of obtained InSe and GaSe nanolayers were studied, as
Autor:
R. A. Redkin, Sergey Yu. Sarkisov, V. A. Novikov, Yury S. Sarkisov, Timofei Mihaylov, S. A. Bereznaya, I. Kolesnikova, D. A. Kobtsev, Vladimir Voevodin
Publikováno v:
International journal of modern physics B. 2021. Vol. 35, № 27. P. 2150273-1-2150273-14
GaSe nanoflakes on silicon substrates covered by SiO2 films are prepared by mechanical exfoliation from the bulk Bridgman-grown GaSe crystals using a scotch tape. The thickness of SiO2 films on Si substrates providing the highest optical contrast for
Autor:
Yu. S. Sarkisov, A. S. Kurasova, Victor V. Atuchin, A. I. Saprykin, B. M. Kuchumov, Z. V. Korotchenko, A. I. Chernyshov, Ilya V. Korolkov, S. A. Bereznaya, S. Yu. Sarkisov
Publikováno v:
Russian physics journal. 2018. Vol. 61, № 1. P. 191-195
A procedure for the synthesis of a CdSiP2 compound from the initial elementary components in a gradient thermal field has been developed. The phase and chemical composition of the synthesized and recrystallized material is confirmed by the data of X-
Autor:
V. N. Brudnyi, Victor V. Atuchin, A. V. Kosobutsky, Z. V. Korotchenko, R. A. Redkin, S. Yu. Sarkisov, S. A. Bereznaya
Publikováno v:
Infrared Physics & Technology. 77:100-103
Terahertz generation from the InP, InSb, GaAs and GaSe crystal surfaces excitated by femtosecond laser pulses has been studied. The terahertz spectra emitted from the native crystals and the crystals previously irradiated by high-energy neutrons or e
Autor:
Z. V. Korotchenko, S. A. Bereznaya, S. Yu. Sarkisov, V. A. Novikov, R. A. Redkin, Victor V. Atuchin
Publikováno v:
Infrared Physics & Technology. 76:126-130
The process of GaSe native oxide formation was studied using atomic-force microscopy. It was found that the oxide film growth is accompanied by a work function increase. This increase saturates in several hours. The illumination by 1 mW laser at 650
Autor:
I. A. Prudaev, A. N. Zarubin, Z. V. Korotchenko, S. A. Bereznaya, O. P. Tolbanov, S. Yu. Sarkisov, R. A. Redkin
Publikováno v:
Russian physics journal. 2015. Vol. 58, № 8. P. 1181-1185
Thin amorphous SiO2, TiO2, and Ga2O3 films were deposited on the surface of GaSe crystals by thermal and magnetron sputtering. It was found that under different technological conditions, the SiO2 and TiO2 layers on the surface of GaSe crack, while th
Autor:
A E Tel'minov, Victor F. Tarasenko, D. E. Genin, Aleksei N Panchenko, Z. V. Korotchenko, A. G. Sitnikov, S. A. Bereznaya, S. Yu. Sarkisov
Publikováno v:
Russian Physics Journal. 53:949-955
Theoretical estimates and experimental results of the study of the second harmonic oscillation in nonlinear GaSe and GaSe:S crystals excited by a 10.6-μm CO2 laser are presented. The measured second harmonic maximum radiation power and power convers
Autor:
Z. V. Korotchenko, A. I. Chernyshev, V. N. Kruchinin, S. Yu. Sarkisov, T. A. Gavrilova, S. A. Bereznaya, Victor V. Atuchin, O. P. Tolbanov
Publikováno v:
Russian Physics Journal. 53:346-352
A series of technological experiments on the growth of GaSe:Te single crystals by the Bridgman–Stockbarger method is performed. Surface micromorphology and mechanical properties of crystals with different doping levels are studied. Spectral depende
Autor:
Z. V. Korotchenko, S. Yu. Sarkisov, A. I. Saprykin, Ilya V. Korolkov, S. A. Bereznaya, B. M. Kuchumov, Victor V. Atuchin
Publikováno v:
Materials Research Express. 5:056204
Autor:
J.-C. Gao, Yu. M. Andreev, S. A. Bereznaya, A.N. Morozov, Tie-Jun Wang, S. Yu. Sarkisov, T. N. Kopylova, Z. V. Korotchenko, T. D. Malinovskaya, Grigory V. Lanskii
Publikováno v:
Russian Physics Journal. 50:560-565
The most probable parameters of the pure, doped, and mixed GaSe1−xSx (x ≤ 0.4) crystals (solid solutions) are presented together with the results of investigations of their crystal structure and defects, optical and mechanical properties, and dam