Zobrazeno 1 - 2
of 2
pro vyhledávání: '"S. A. Balagan"'
Autor:
K. N. Galkin, D. L. Goroshko, E. A. Chusovitin, A. V. Shevlyagin, S. A. Balagan, A. K. Gutakovskii, T. S. Shamirzaev, N. G. Galkin, Y. Terai, S. A. Dotsenko, M. Iinuma
Publikováno v:
AIP Conference Proceedings.
Embedded in silicon β-FeSi2 nanocrystals (NCs) were grown on Si(111) by solid phase epitaxy of a thin iron film followed by Si molecular beam epitaxy. After solid phase epitaxy, a mixture of β-FeSi2 and e-FeSi nanocrystals is formed on the surface,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61454eabb748cd577cafd051e2595771
https://doi.org/10.1063/1.4998036
https://doi.org/10.1063/1.4998036
Autor:
T. S. Shamirzaev, E.A. Chusovitin, Alexander V. Latyshev, S. A. Balagan, D. L. Goroshko, Yoshikazu Terai, Alexander V. Shevlyagin, S.A. Dotsenko, Motoki Iinuma, Anton K. Gutakovskii, N. G. Galkin, Konstantin N. Galkin
Publikováno v:
Journal of Applied Physics. 121:113101
This article describes the development of an Si-based light-emitting diode with β-FeSi2 nanocrystals embedded in the active layer. Favorable epitaxial conditions allow us to obtain a direct band gap type-I band alignment Si/β-FeSi2 nanocrystals/Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73381d9279effdf70f58336ab0b980bd
https://doi.org/10.1063/1.4978372
https://doi.org/10.1063/1.4978372