Zobrazeno 1 - 10
of 12
pro vyhledávání: '"S. A. Alterovitz"'
Autor:
D. Rosenfeld, S. A. Alterovitz
Publikováno v:
Microwave and Optical Technology Letters. 6:689-692
The results of a theoretical study of the effects of the strain on the cutoff frequencies of SiGe HBTs are presented. The influence of the strain on the base resistance and transit time, and through them on high-frequency performance, was taken into
Autor:
Paul G. Snyder, R. M. Sieg, S. A. Alterovitz, J. Pamulapati, Pallab Bhattacharya, P. A. Sekula-Moise, John A. Woollam, Huade D. Yao
Publikováno v:
Thin Solid Films. 206:288-293
Variable-angle spectroscopic ellipsometry was used to estimate the thickness of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by
Autor:
D. R. Wheeler, Dennis J. Flood, Mircea Faur, G. Mateescu, J. Faulk, M. Goradia, David J. Brinker, D.A. Scheiman, Chandra Goradia, S. A. Alterovitz, Sheila G. Bailey
Publikováno v:
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.
We demonstrate the effectiveness of using wet chemical techniques for Si and Ge planar surfaces to form nanoporous layers, and grow stable passivating oxide layers on planar and porous surfaces, after the front grid metallization step. Our results sh
Autor:
S. A. Alterovitz, Y. Shapira
Publikováno v:
Journal of Thermal Analysis. 18:477-491
We present a mathematical method based on Laplace transform techniques for the analysis of heat capacity and thermal conductivity measurements, for the case of thin film samples on substrates of finite lengths. The method is a further development of
Publikováno v:
Physica Status Solidi (a). 85:69-76
Multiple-wavelength-angle-of-incidence null ellipsometry, together with the effective medium approximation, are used to evaluate both the composition and the geometrical structure of an insulating film made of silicon nitride and silicon oxide on a G
Publikováno v:
Applied Physics Letters. 49:584-586
Hall measurements on four n-type cubic SiC films epitaxially grown by chemical vapor deposition on SiC substrates are reported. The temperature dependent carrier concentrations indicate that the samples are highly compensated. Donor ionization energi
Autor:
S. A. Alterovitz, J. A. Woollam
Publikováno v:
Cryogenics. 19:167-169
Critical current densities, Jc, of sputtered Chevrel phase PbMo6S8 films have been measured as a function of field to 19 T at several temperatures. The pinning forces were found to obey a scaling law. Assuming an effective upper critical field Bc2 =
Publikováno v:
Topics in Current Physics ISBN: 9783642818707
Physical properties and preparation methods of thin film ternary superconductors, (mainly molybdenum chalcogenides) are reviewed. Properties discussed include the superconducting critical fields and critical currents, resistivity and the Hall effect.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77bf0b5cffef7bf24b4e5e116ff6dc52
https://doi.org/10.1007/978-3-642-81868-4_5
https://doi.org/10.1007/978-3-642-81868-4_5
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:619-620