Zobrazeno 1 - 10
of 28
pro vyhledávání: '"S. Ş. Çetin"'
Publikováno v:
Silicon. 12:2879-2883
The TiO2/SiO2 film being the dielectric layer was grown on the n-Si wafer using radio frequency (RF) magnetron sputtering. Thus, the Au/TiO2/SiO2/n-Si metal-oxide-semiconductor (MOS) capacitor was fabricated with the forming of metal contacts. The op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f619be02e202bd3378944d23ab3089f2
https://doi.org/10.1007/s12633-020-00383-8
https://doi.org/10.1007/s12633-020-00383-8
Publikováno v:
Ceramics International. 45:11-18
Influences of thermal annealing on structural, optical and morphological properties of the tantalum pentoxide (Ta2O5) thin films were investigated and anti-reflective performances were discussed in detail. The Ta2O5 thin films were deposited onto Cor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4db98543c0a86c48a4f0b43332f3392e
https://doi.org/10.1016/j.ceramint.2018.09.237
https://doi.org/10.1016/j.ceramint.2018.09.237
Autor:
Halil İbrahim Efkere, Nurettin Topaloğlu, Adem Tataroğlu, Hakan Ates, S. Ş. Çetin, M. Polat Gonullu
Publikováno v:
Journal of Molecular Structure. 1165:376-380
In this study, we investigated the effect of thickness on the optical, structural and electrical properties of ZnO thin film deposited on n-type Si wafer. Three groups of transparent conductive ZnO layers were successively deposited by Radio Frequenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a79f992a322f3db7766291469cb3a7a
https://doi.org/10.1016/j.molstruc.2018.04.022
https://doi.org/10.1016/j.molstruc.2018.04.022
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:1939-1946
The structural, optical and electrical properties of dilute nitride p-n junction GaP1-x-yAsyNx structures grown on n-type GaP (100) and n-type Si (100) misoriented by 4A degrees towards the [110] direction substrates were studied. These properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c270f266d7b79000a265209e10df46e9
https://doi.org/10.1007/s10854-017-8104-y
https://doi.org/10.1007/s10854-017-8104-y
Publikováno v:
Journal of Electronic Materials. 46:4590-4595
In this study, the electrical properties of dilute nitride GaAsPN/GaPN multi-quantum well p-i-n diodes were investigated by using current-voltage (I-V) measurements at room temperature. The diode structure was grown on silicon (Si) (100) substrate mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2d67827a76c68148a78296b1d18cd51
https://doi.org/10.1007/s11664-017-5460-6
https://doi.org/10.1007/s11664-017-5460-6
The structural, optical, electrical and electrical-optical properties of a double-junction GaAsP light-emitting diode (LED) structure grown on a GaP (100) substrate by using a molecular beam epitaxy technique were investigated. The p-n junction layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9ad3c4887aadf4e36a046d60f09f0c1
https://aperta.ulakbim.gov.tr/record/28725
https://aperta.ulakbim.gov.tr/record/28725
TiO2 thin films have been deposited on glass and Si(100) by atomic layer deposition (ALD) technique using tetrakis(diethylamido)titanium(IV) and water vapor as reactants. Thorough investigation of the properties of the TiO2/glass and TiO2/Si thin fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de72ab4296e67ad0cdbbb7e5f1ac8e84
https://aperta.ulakbim.gov.tr/record/93509
https://aperta.ulakbim.gov.tr/record/93509
Publikováno v:
Applied Physics A. 114:1215-1221
The structural and morphological properties of metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN light-emitting diode (LED) structures with different In content have been studied by high-resolution X-ray diffraction (HRXRD), atomic forc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f57e25df495b6dbbb5e8ce3e65bdeb01
https://doi.org/10.1007/s00339-013-7857-2
https://doi.org/10.1007/s00339-013-7857-2
Autor:
Mustafa Öztürk, Süleyman Özçelik, S. Ş. Çetin, S. Çörekçi, Mehmet Çakmak, Ekmel Ozbay, S. Dugan
Publikováno v:
Journal of Electronic Materials
Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), photolumines
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04a59cf154d261fd4d8632c5f42f9f73
https://hdl.handle.net/11693/36890
https://hdl.handle.net/11693/36890
Autor:
Dumitru Baleanu, Cristina-Mihaela Băleanu, Raoul R. Nigmatullin, Süleyman Özçelik, S. Ş. Çetin
Publikováno v:
Open Physics, Vol 9, Iss 3, Pp 729-739 (2011)
In this paper we presented a new method (Eigen-Coordinates (ECs)) that can be used for calculations of the critical points (CPs) energy of the interband-transition edges of the heterostructures. This new method is more accurate and complete in compar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c4bbb8d89c22bcfefab27b2d105417a
https://doaj.org/article/31bc23d671e44e0daa1e38df26e3c7fd
https://doaj.org/article/31bc23d671e44e0daa1e38df26e3c7fd