Zobrazeno 1 - 3
of 3
pro vyhledávání: '"S., Bogolubskii A."'
Autor:
N., Neverov V., S., Klepikova A., S., Bogolubskii A., V., Gudina S., V., Turutkin K., V., Yakunin M., Mikhailov, N. N., Dvoretsky, S. A.
The results of the longitudinal and Hall magnetoresistivity measurements in the Shubnikov - de Haas oscillation regime for the HgCdTe/HgTe/HgCdTe heterostructures with a wide (20.3 nm) HgTe quantum well are presented. An anomalous phase shift of magn
Externí odkaz:
http://arxiv.org/abs/2002.02283
Autor:
S. V. Gudina, M. V. Yakunin, Sergey A. Dvoretsky, V. N. Neverov, K. V. Turutkin, Nikolay N. Mikhailov, A. S. Bogolubskii, M. R. Popov, N. G. Shelushinina, S. M. Podgornykh
Publikováno v:
Semiconductors. 54:982-990
We present a study of Shubnikov–de Haas (SdH) oscillations at temperatures of (2.2–10) K in magnetic fields up to 2.5 T in the HgCdTe/HgTe/HgCdTe heterostructure for a wide (20.3 nm) HgTe quantum well with an inverted energy band structure. The a
Autor:
S. M. Podgornykh, E. V. Ilchenko, G. I. Harus, A. S. Bogolubskii, S. V. Gudina, Sergey A. Dvoretsky, V. N. Neverov, N. G. Shelushinina, Nikolay N. Mikhailov, M. V. Yakunin
Publikováno v:
Semiconductors. 52:12-18
The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the mag