Zobrazeno 1 - 2
of 2
pro vyhledávání: '"S-G Kim Kim"'
Autor:
D-W Lee Lee, J-G Koo Koo, Jongdae Kim Kim, S-G Kim Kim, K-I Cho Cho, Yi Kang Kang, I-Y Park Park, Tae Moon Roh Roh, Yil Suk Yang
Publikováno v:
ETRI Journal. 24:333-340
We propose a new process technique for fabricating very high-density trench MOSFETs using 3 mask layers with oxide spacers and a self-aligned technique. This technique reduces the device size in trench width, source, and p-body region with a resultin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae268fd8f2492c4861d8b5b700ac0662
https://doi.org/10.4218/etrij.02.0102.0501
https://doi.org/10.4218/etrij.02.0102.0501
Autor:
Yil Suk Yang, Jongdae Kim Kim, Tae Moon Roh Roh, Dae Woo Lee Lee, JG Koo Koo, S-G Kim Kim, IY Park Park, BG Yu Yu
Publikováno v:
ETRI Journal. 24:462-464
This paper presents a serial interface circuit that permits selection of the amount of data converted from serial-to-parallel and parallel-to-serial and overcomes the disadvantages of the conventional serial input/output interface. Based on the selec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::759fbe13dba686084903d95e7a6bd690
https://doi.org/10.4218/etrij.02.0202.0001
https://doi.org/10.4218/etrij.02.0202.0001