Zobrazeno 1 - 10
of 57
pro vyhledávání: '"S von Aichberger"'
Publikováno v:
Journal of Applied Physics. 91:9147-9150
p-type Si wafers provided with silicon nitride films at the surface are investigated by contactless transient photoconductivity measurements. Comparing wafers of different resistivities and wafers at one side and at two sides provided with nitride fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dc1d961460fcd36445b8a851d8e3a78
https://doi.org/10.1063/1.1473214
https://doi.org/10.1063/1.1473214
Publikováno v:
Materials Science and Engineering: B. :224-228
The use of microwave photoconductivity measurements as a tool for the non-destructive characterization of semiconductors is studied and the experimental equipment is described. Through some examples of experiments on silicon wafers covered with a sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::485e994ea4c97fdc740a23765cec3e8e
https://doi.org/10.1016/s0921-5107(01)01014-5
https://doi.org/10.1016/s0921-5107(01)01014-5
Publikováno v:
Journal of Non-Crystalline Solids. :1198-1202
Amorphous silicon/crystalline silicon (c-Si) heterojunctions are studied by contactless transient photoconductivity measurements at the microwave frequency range. Excellent passivation of the n-type crystalline silicon (n c-Si) surface by n-type, hyd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3072c8405e4ad4bca01634448789994
https://doi.org/10.1016/s0022-3093(01)01139-5
https://doi.org/10.1016/s0022-3093(01)01139-5
Publikováno v:
Journal of Non-Crystalline Solids. :756-760
The optoelectronic properties of μc-Si films produced in different ways are studied by contactless transient photoconductivity measurements in the microwave frequency range. A strong charge carrier trapping is observed in most μc-Si films. The effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d6a927190d78e2d3a42e8b44f2ba16f
https://doi.org/10.1016/s0022-3093(01)01111-5
https://doi.org/10.1016/s0022-3093(01)01111-5
Publikováno v:
Thin Solid Films. :449-452
The passivating influence of a-Si:H films on the c-Si surface is shown by contactless transient photoconductivity measurements in the microwave frequency range. A relation between the signal and the performance of a-Si:H/c-Si heterojunctions for sola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::474591343ae1efba02761fd53055c0ab
https://doi.org/10.1016/s0040-6090(01)01661-3
https://doi.org/10.1016/s0040-6090(01)01661-3
Publikováno v:
Solar Energy Materials and Solar Cells. 66:195-201
The influence of doping on the (opto)electronic properties of a-Si : H films is investigated by transient photoconductivity and photo-induced absorption measurements. The decay rate of the majority charge carrier decreases with doping due to fast min
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e063b80d7db678709122847f03f5960a
https://doi.org/10.1016/s0927-0248(00)00173-2
https://doi.org/10.1016/s0927-0248(00)00173-2
Publikováno v:
Solar Energy Materials and Solar Cells. 65:417-422
To investigate the relation between interface passivation and the performance of an a-Si:H/c-Si solar cell, we monitored the glow discharge deposition process of n-doped a-Si:H films on p-doped crystalline silicon in situ by transient photoconductivi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c6a172e20e93326b780e7674667255a
https://doi.org/10.1016/s0927-0248(00)00121-5
https://doi.org/10.1016/s0927-0248(00)00121-5
Publikováno v:
Solar Energy Materials and Solar Cells. 65:119-124
Contactless transient photoconductivity measurements in n-doped GaAs films with different doping concentrations are presented. It is shown that at low excess carrier densities the signal is due to excess charge carriers separated in the space charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55d2916bcdb075fbc7e7f327c623895b
https://doi.org/10.1016/s0927-0248(00)00085-4
https://doi.org/10.1016/s0927-0248(00)00085-4
Publikováno v:
Solar Energy Materials and Solar Cells. 65:111-117
a-Si:H/c-Si junctions were investigated by contactless photoconductivity measurements in the microwave frequency range. The dependence of the junction properties on the thickness of the a-Si:H films was determined via a characterization by the interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1d5479141488926883296ead2080792
https://doi.org/10.1016/s0927-0248(00)00084-2
https://doi.org/10.1016/s0927-0248(00)00084-2
Publikováno v:
Journal of Non-Crystalline Solids. :1124-1128
We report on a first study of electrically detected magnetic resonance (EDMR) on crystalline silicon (c-Si) solar cells with gas-phase deposited n-type amorphous (a-Si:H) and c-Si emitters (epi-Si). The spectra of epi-Si emitter cells have at least f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa3f387b7957b230dd956c73dc0a90ed
https://doi.org/10.1016/s0022-3093(99)00915-1
https://doi.org/10.1016/s0022-3093(99)00915-1