Zobrazeno 1 - 10
of 26
pro vyhledávání: '"S Y H Lua"'
Publikováno v:
IEEE Transactions on Nanotechnology. 19:613-619
This paper proposes a novel multi-level cell spin-orbit torque magnetic random-access memory (MLC SOT-MRAM) cell structure and validates its functionality and performance through simulation. The proposed memory cell comprises two uniform magnetic tun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89240260bc846caea70f96a6e4b919f2
https://doi.org/10.1109/tnano.2020.3012669
https://doi.org/10.1109/tnano.2020.3012669
Publikováno v:
IECON
This paper proposes two spin orbit torque nonvolatile static random-access memories (SOT-NVSRAMs) with reduced area overhead. One of the proposed cells comprises nine transistors (9T) and a pair of complementary SOT-MTJs and the other comprises seven
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40625a799161d7a14cc0efc10a0b0e0e
https://doi.org/10.1109/iecon43393.2020.9254623
https://doi.org/10.1109/iecon43393.2020.9254623
Publikováno v:
IEEE Transactions on Magnetics. 54:1-5
This paper proposes a diode-based multi-level cell spin–orbit torque magnetic random-access memory (SOT-MRAM) for high density memory applications. By stacking a shared diode over two in-parallel magnetic tunnel junctions (MTJs) that share a common
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67ac249c444c3a0ddc72c4137d17a4bc
https://doi.org/10.1109/tmag.2018.2848114
https://doi.org/10.1109/tmag.2018.2848114
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26:630-638
This paper proposes two enhanced architectures for spin–orbit torque nonvolatile flip-flop (SOT-NVFF), namely, parallel programming scheme (pSOT-NVFF) and series programming scheme (sSOT-NVFF). At given SOT magnetic tunnel junction (SOT-MTJ) techno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e0556578485506495ef4e64c6739055
https://doi.org/10.1109/tvlsi.2017.2787664
https://doi.org/10.1109/tvlsi.2017.2787664
Publikováno v:
IEEE Magnetics Letters. 9:1-5
We propose a multibit-per-cell architecture for spin-orbit torque magnetic random access memory (MBC SOT-MRAM) for high-density memory applications. By employing two diode-based magnetic tunnel junctions with a shared common heavy metal electrode, ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eea5bfd64f55b67714cb7b6ad6250693
https://doi.org/10.1109/lmag.2018.2829111
https://doi.org/10.1109/lmag.2018.2829111
Publikováno v:
MWSCAS
This paper proposes a compact diode based spin orbit torque non-volatile latch (D-SOT-NVL) design. The proposed NVL can accommodate two different operation schemes. Firstly, a nominal scheme at which the data is stored on the SOTMTJs when an external
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b9b964eb2ab48355bccb849a91d31e3
https://doi.org/10.1109/mwscas.2018.8624005
https://doi.org/10.1109/mwscas.2018.8624005
Publikováno v:
2018 IEEE International Magnetics Conference (INTERMAG).
Spin-orbit torque magnetic random access memory (SOT-MRAM) is considered as one of the most promising technologies to replace or co-exist with the current leaky CMOS charge based memories such as SRAM and DRAM, thanks to SOT-MRAM's non-volatility, hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ec7dc2d7c683ef5fce1bcc1a5dfdec8
https://doi.org/10.1109/intmag.2018.8508418
https://doi.org/10.1109/intmag.2018.8508418
Publikováno v:
IEEE Transactions on Nanotechnology. 14:540-545
This paper presents an accurate resistance characterization technique for magnetic random access memory (MRAM), such as STT-MRAM. By annulling the mismatch effect of CMOS transistors, this technique produces a resistance distribution profile of MRAM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc95becadfcd81620bbf47b9848becd6
https://doi.org/10.1109/tnano.2015.2415524
https://doi.org/10.1109/tnano.2015.2415524
Publikováno v:
IEEE Transactions on Magnetics. 47:3868-3871
We designed and modeled a nonvolatile memory device that utilizes the Rashba spin-orbit coupling (SOC) to write data onto a free ferromagnetic (FM) layer and uses the tunneling magnetoresistive (TMR) effect for data read-back. The magnetic RAM (MRAM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::856782789fba45ae4e76717cf0d00ce2
https://doi.org/10.1109/tmag.2011.2158634
https://doi.org/10.1109/tmag.2011.2158634
Publikováno v:
IEEE Transactions on Magnetics. 46:1385-1388
We study the magnetization reversal process of tri-layer readers using micromagnetic simulations. The magnetoresistance response of tri-layer readers has been shown to be distinctive from the conventional spin valve giant magnetoresistance sensors. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e1ea9d341c398029a8a557e41bdc161
https://doi.org/10.1109/tmag.2010.2042686
https://doi.org/10.1109/tmag.2010.2042686