Zobrazeno 1 - 10
of 51
pro vyhledávání: '"S V, Kalinin"'
Autor:
A. Yousefzadi Nobakht, O. Dyck, D. B. Lingerfelt, F. Bao, M. Ziatdinov, A. Maksov, B. G. Sumpter, R. Archibald, S. Jesse, S. V. Kalinin, K. J. H. Law
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065034-065034-6 (2020)
The broad incorporation of microscopic methods is yielding a wealth of information on the atomic and mesoscale dynamics of individual atoms, molecules, and particles on surfaces and in open volumes. Analysis of such data necessitates statistical fram
Externí odkaz:
https://doaj.org/article/08eef82d9e064e7e8c8eaa0f070fa2a0
Autor:
S. Somnath, K. J. H. Law, A. N. Morozovska, P. Maksymovych, Y. Kim, X. Lu, M. Alexe, R. Archibald, S. V. Kalinin, S. Jesse, R. K. Vasudevan
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-11 (2018)
Scanning probe microscopy is widely used to characterize material properties with atomic resolution, yet electronic property mapping is normally constrained by slow data acquisition. Somnath et al. show a current–voltage method, which enables fast
Externí odkaz:
https://doaj.org/article/0560a29d3d0542a29e7e7ef7cbf10762
Autor:
Q. Li, C. T. Nelson, S.-L. Hsu, A. R. Damodaran, L.-L. Li, A. K. Yadav, M. McCarter, L. W. Martin, R. Ramesh, S. V. Kalinin
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Flexoelectric coupling between strain gradients and polarization influences the physics of ferroelectric devices but it is difficult to directly probe its effects. Here, Li et al. use principal component analysis to compare STEM images with phase-fie
Externí odkaz:
https://doaj.org/article/5c2afb0ab0ce462a92da7d13496d55bb
Autor:
M. Ziatdinov, A. Banerjee, A. Maksov, T. Berlijn, W. Zhou, H. B. Cao, J.-Q. Yan, C. A. Bridges, D. G. Mandrus, S. E. Nagler, A. P. Baddorf, S. V. Kalinin
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-8 (2016)
The two-dimensional Kitaev model is a quantum spin liquid state that theory predicts should appear in some materials with a honeycomb lattice. Here, the authors use atom-resolution scanning transmission electron and scanning tunnelling microscopies t
Externí odkaz:
https://doaj.org/article/26533e2d330545deb23f9ef3250762c6
Autor:
C.-Y. Kuo, Z. Hu, J. C. Yang, S.-C. Liao, Y. L. Huang, R. K. Vasudevan, M. B. Okatan, S. Jesse, S. V. Kalinin, L. Li, H. J. Liu, C.-H. Lai, T. W. Pi, S. Agrestini, K. Chen, P. Ohresser, A. Tanaka, L. H. Tjeng, Y. H. Chu
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
The coupling of ferroelectric and antiferromagnetic order in BiFeO3 makes it appealing for applications however the presence of domain structure acts to undermine this potential. Here, the authors demonstrate BiFeO3thin films with a single domain of
Externí odkaz:
https://doaj.org/article/1f305172b6a641bf892ce124b56d9726
Publikováno v:
Journal of Engineering Mathematics. 115:141-156
Interaction of the highly localized probe of scanning probe microscopy with solid surfaces with mobile electronic or ionic carriers leads to the redistribution of mobile carriers at the tip surface junction. For small probe biases, this problem is eq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7778e527b1cfa662aaca71fc3b567062
https://doi.org/10.1007/s10665-019-09996-4
https://doi.org/10.1007/s10665-019-09996-4
Publikováno v:
Ukrainian Journal of Physics; Vol. 62 No. 4 (2017); 326
Український фізичний журнал; Том 62 № 4 (2017); 326
Український фізичний журнал; Том 62 № 4 (2017); 326
Strong coupling among electrochemical potentials, concentrations of electrons, ions, and strains mediated by the flexoelectric effect is a ubiquitous feature of moderate conductors, in particular, MIECs, the materials of choice in devices ranging fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5510181b786eaf5807068af328ec4fb
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018692
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018692
Autor:
A. V. Egorkin, S. V. Kalinin
Publikováno v:
Russian Microelectronics. 44:114-126
Two-dimensional models of thermal oxidation of silicon, including those implemented using the SProcess application in the TCAD SenTaurus environment, are analyzed. A number of practically-important test structures, which demonstrate the peculiarities
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79a08517b937806c407e554e3af19cd7
https://doi.org/10.1134/s1063739714060055
https://doi.org/10.1134/s1063739714060055
Publikováno v:
Zeitschrift für angewandte Mathematik und Physik. 69
We consider the problem of an arbitrary shaped rigid punch pressed against the boundary of a transversely isotropic half-space and interacting with an arbitrary flat crack or inclusion, located in the plane parallel to the boundary. The set of govern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::803cb7d719d53bd508c90bfe9fd6ffb7
https://doi.org/10.1007/s00033-017-0894-5
https://doi.org/10.1007/s00033-017-0894-5
Publikováno v:
Steel in Translation. 44:610-613
The defect composition at the surface of continuous-cast stainless-steel slabs is investigated, as well as the microstructure of the defects and the nonmetallic inclusions in cast metal and cold-rolled sheets of austenitic stainless steel trimmed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa7f5d5abb3d73d3fc705f4c7dd01072
https://doi.org/10.3103/s0967091214080129
https://doi.org/10.3103/s0967091214080129