Zobrazeno 1 - 10
of 29
pro vyhledávání: '"S Strehlke"'
Publikováno v:
Der Gynäkologe. 48:801-809
Die WOLVES (Wolfsburg HPV Epidemiology Study)-Studie ist die erste populationsbasierte Langzeitbeobachtungsstudie in Deutschland zu HPV-assoziierten Erkrankungen in einem Normalkollektiv. Alle Frauen der Geburtsjahrgange 1983/84 und 1988/89, die beim
Publikováno v:
Geburtshilfe und Frauenheilkunde. 76
Comparison of Anyplex II HPV HR- and Hybrid Capture2 testing in a screening population (WOLPHSCREEN)
Publikováno v:
Geburtshilfe und Frauenheilkunde. 76
Publikováno v:
Geburtshilfe und Frauenheilkunde. 76
Publikováno v:
Geburtshilfe und Frauenheilkunde. 74
Publikováno v:
Materials Science and Engineering: B. :81-86
A porous silicon (PS) layer formed electrochemically in the outer part of the n emitter of p-n Si junctions can be used as an efficient antireflection coating (ARC). A two-step procedure is presented which can determine the electrochemical parameters
Publikováno v:
Solar Energy Materials and Solar Cells. 58:399-409
The antireflection properties of electrochemically formed porous silicon (PS) layers in the 0.3 μm thick n+ emitter of Si p–n+ junctions, have been optimized for application to commercial silicon photovoltaic cells. The porosity and thickness of t
Autor:
S Strehlke, Jef Poortmans, Hugo Bender, Lieven Stalmans, Robert Mertens, Claude Lévy-Clément, L Debarge, Johan Nijs, Abdelilah Slaoui, S Jin, Thierry Conard
Publikováno v:
Solar Energy Materials and Solar Cells. 58:237-252
Porous silicon (PS) has several potential interests for crystalline Si solar cells. Besides the use as an anti-reflection coating, the porous layer also acts as a light-diffusor. However, major drawbacks are the light absorption within the porous lay
Publikováno v:
Solar Energy Materials and Solar Cells. 57:393-417
The electrochemical formation of porous silicon (PS) layers in the n+ emitter of silicon p–n+ homojunctions for solar energy conversion has been investigated. During the electrochemical process under constant polarization, a variation of the curren
Publikováno v:
Journal of Luminescence. 80:147-152
We present a systematic study on ultrathin porous silicon (PS) layers (40–120 nm) of different porosities, formed by electrochemical etching and followed by thermal oxidation treatment (300°C and 600°C) and by electrochemical oxidation. The oxidi