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pro vyhledávání: '"S Shvetsov"'
Publikováno v:
Nanobiotechnology Reports. 16:777-781
Akademický článek
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Publikováno v:
Physical Review Applied. 17
Memristors are among the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states. However, identifying the physical mechanisms of resistive
Autor:
A. A. Minnekhanov, M. N. Martyshov, Boris S. Shvetsov, Vyacheslav A. Demin, A. A. Nesmelov, Andrey V. Emelyanov, V. V. Rylkov
Publikováno v:
Semiconductors. 54:1103-1107
The results of studying the room-temperature conductance quantization of memristive structures based on poly-p-xylylene organic material with resistive switching are presented. The measurement procedures are shown and comparative analysis of manifest
Autor:
Andrey A. Merkulov, Nikita O. Ignat'ev, Aleksandr S. Shvetsov, Sergei A. Zhgoon, Ksenia E. Lipshits
Publikováno v:
2022 4th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE).
Publikováno v:
Journal of Physics: Conference Series. 2373:052004
The article deals with the problem of metrological support of innovative technologies, in particular, related to the production of promising renewable energy sources such as biofuels. In the process of biofuel separation, it is very important to moni
Publikováno v:
Physics of Particles and Nuclei Letters. 17:539-541
This article presents the general layout, requirements for main elements, design of main elements, overall design, and calculation of the magnetic fields of the Nuclotron injection kicker.
Publikováno v:
Physics of Particles and Nuclei Letters. 17:528-530
The design of a high-voltage collet with movable external and internal conductors is considered. The design of the grip connection, the choice of material for the grips, and the conditions for ensuring reliable electrical contact in it are described
Autor:
Boris S. Shvetsov, A. A. Nesmelov, M. N. Martyshov, B. V. Goncharov, Pavel A. Forsh, Vyacheslav A. Demin, Dmitry A. Lapkin, A. N. Matsukatova, Andrey V. Emelyanov, V. V. Rylkov, A. A. Minnekhanov
Publikováno v:
Technical Physics Letters. 45:1103-1106
Flexible memristive structures based on poly-para-xylelene layers, which exhibit stable resistive switchings and are resistant to bendings with radii up to 10 mm, have been prepared and studied. A two-step scheme of setting the resistive state of the
Autor:
Boris S. Shvetsov, Vladimir V. Rylkov, E. V. Kukueva, K. E. Nikiruy, Vyacheslav A. Demin, Pavel A. Forsh, Mikhail Yu. Presnyakov, Victor Erokhin, Mikhail M. Martyshov, A. A. Minnekhanov, Andrey V. Emelyanov
Publikováno v:
Organic electronics
74 (2019): 89–95. doi:10.1016/j.orgel.2019.06.052
info:cnr-pdr/source/autori:Minnekhanov A. A.; Shvetsov B. S.; Martyshov M. M.; Nikiruy K. E.; Kukueva E. V; Presnyakov M. Yu; Forsh P. A.; Rylkov V. V.; Erokhin V. V.; Demin V. A.; Emelyanov A. V./titolo:On the resistive switching mechanism of parylene-based memristive devices/doi:10.1016%2Fj.orgel.2019.06.052/rivista:Organic electronics (Print)/anno:2019/pagina_da:89/pagina_a:95/intervallo_pagine:89–95/volume:74
74 (2019): 89–95. doi:10.1016/j.orgel.2019.06.052
info:cnr-pdr/source/autori:Minnekhanov A. A.; Shvetsov B. S.; Martyshov M. M.; Nikiruy K. E.; Kukueva E. V; Presnyakov M. Yu; Forsh P. A.; Rylkov V. V.; Erokhin V. V.; Demin V. A.; Emelyanov A. V./titolo:On the resistive switching mechanism of parylene-based memristive devices/doi:10.1016%2Fj.orgel.2019.06.052/rivista:Organic electronics (Print)/anno:2019/pagina_da:89/pagina_a:95/intervallo_pagine:89–95/volume:74
Parylene is a widely used polymer possessing such advantages as low cost and safety for the human body. Recently, several studies have been conducted showing that parylene can be used as a dielectric layer of memristors — new circuit design element