Zobrazeno 1 - 10
of 47
pro vyhledávání: '"S Schippel"'
Autor:
Mark Schürmann, Josephine Wolf, Lars Mechold, Kai Starke, Martin Bischoff, Michael Kennedy, Henrik Ehlers, Thomas Hegemann, Olaf Stenzel, Norbert Kaiser, S Schippel, Florian Carstens, Tobias Nowitzki, R Rauhut, Rüdiger Foest, Detlev Ristau, J. Harhausen, Holger Reus, Jens Schumacher, Harro Hagedorn, Alfons Zöller, Steffen Wilbrandt
Publikováno v:
Applied optics. 56(4)
Random effects in the repeatability of refractive index and absorption edge position of tantalum pentoxide layers prepared by plasma-ion-assisted electron-beam evaporation, ion beam sputtering, and magnetron sputtering are investigated and quantified
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6bc3845f59b35984bc1b3859f8571b7
https://pubmed.ncbi.nlm.nih.gov/28158073
https://pubmed.ncbi.nlm.nih.gov/28158073
Thin films of titanium dioxide (TiO2) are important high refractive index coatings in optical multilayer stacks. Especially interesting is the rutile crystalline phase of TiO2 films because it's refractive index in the range of 2.6…2.7 is the highe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::adc1a5c8c151e335799c60d8de3a3345
https://publica.fraunhofer.de/handle/publica/243790
https://publica.fraunhofer.de/handle/publica/243790
Publikováno v:
Springer Series in Optical Sciences ISBN: 9783319176581
We report the results of the development of an electron source, based on the emission of electrons from plasma. The plasma electron source delivers emission currents of more than 1 A, based on a laser-induced discharge plasma and grid-controlled elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eb2ef32386729b9777b64fa25192cac
https://doi.org/10.1007/978-3-319-17659-8_15
https://doi.org/10.1007/978-3-319-17659-8_15
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 114:46-55
(111) Si samples were implanted first with 250 keV Co + ions and afterwards with 30 keV Co + ions. In one case, the low-energy implantation is performed at an subcritical dose (provides no continuous CoSi 2 layer after annealing) and the high-energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4999c73a95a4dee705ddcb28ecf27ea0
https://doi.org/10.1016/0168-583x(96)00050-x
https://doi.org/10.1016/0168-583x(96)00050-x
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 106:350-354
〈100〉 and 〈111〉-Ge single crystals were preamorphized in a thin surface layer using 50 keV or 85 keV N+ ions. Ion beam induced epitaxial crystallization (IBIEC) and interfacial amorphization (IBIIA) at the amorphous/crystalline interface were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e1f42d0ec08bb4ff07e7e38bcb3e625
https://doi.org/10.1016/0168-583x(96)80029-2
https://doi.org/10.1016/0168-583x(96)80029-2
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 106:281-288
Ion beam induced epitaxial crystallization (IBIEC) during irradiation with high energy ions is investigated in preamorphized InP, GaP and InAs under different conditions of temperature and dose rate. The maximum thicknesses of the layers crystallized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92bd984c3f2357f23b996eb9ee47113d
https://doi.org/10.1016/0168-583x(95)00719-9
https://doi.org/10.1016/0168-583x(95)00719-9
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 94:231-236
Silicide formation in the Co/Si system during ion beam mixing with Kr + at elevated temperatures and subsequent annealing has been studied as a function of Kr + dose, implantation temperature and annealing conditions. It was found that CoSi is formed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fed3b874e5063a07e35786f2e401a76c
https://doi.org/10.1016/0168-583x(94)95359-7
https://doi.org/10.1016/0168-583x(94)95359-7
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 89:168-173
GaAs and InP crystals were implanted with 1.6 MeV Ar+ and 2.0 MeV Se2+ ions in the dose range of 1 × 1012 cm−2 up to 3 × 1015 cm−2 at room temperature. The investigation of the resulting damage after implantation by means of Rutherford backscat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6ab17113f3e654fee364f8fee00fde0
https://doi.org/10.1016/0168-583x(94)95166-7
https://doi.org/10.1016/0168-583x(94)95166-7
Publikováno v:
Materials Science Forum. :1577-1582
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6f380ddbc38f403bbfc6abfdb0ef882
https://doi.org/10.4028/www.scientific.net/msf.143-147.1577
https://doi.org/10.4028/www.scientific.net/msf.143-147.1577
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 82:579-583
The combination of PIXE and RBS measurements enables the deconvolution of the interference between the Cd-L- and the K-K α -line for the quantitative analysis of Cd-concentration in the ppm region. An evaluation of the experimental data using the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa72eccf84b2953e376b80aae675bb79
https://doi.org/10.1016/0168-583x(93)96013-3
https://doi.org/10.1016/0168-583x(93)96013-3