Stacking, polarization control, and lasing of wavelength tunable (1.55μm region) InAs/InGaAsP/InP (100) quantum dots

Autor: Y.S. Oei, Erwin Bente, TJ Tom Eijkemans, S Sanguan Anantathanasarn, T. de Vries, R Richard Nötzel, F. W. M. van Otten, Yohan Barbarin, P.J. van Veldhoven, E. Smalbrugge, JH Joachim Wolter, MK Meint Smit, E.J. Geluk

Publikováno v: Journal of Crystal Growth, 298(1), 553-557. Elsevier
Proceedings of the 13th International Conference on Metal Organic Vapour Phase Epitaxy (ICMOVPE-XIII), 22-26 May 2006, Miyazaki, Japan, 1-2
STARTPAGE=1;ENDPAGE=2;TITLE=Proceedings of the 13th International Conference on Metal Organic Vapour Phase Epitaxy (ICMOVPE-XIII), 22-26 May 2006, Miyazaki, Japan

We report the growth, device fabrication, and performance of stacked InAs/InGaAsP/InP (1 0 0) quantum dots (QDs) in telecom lasers. Wavelength tuning of the QDs grown by metalorganic vapor-phase epitaxy (MOVPE) over the 1.55-μm region at room temper

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47a8762eaeee0ad1bab5af076831c6a9
https://doi.org/10.1016/j.jcrysgro.2006.10.173

Photoluminescence and capacitance–voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

Autor: Hideki Hasegawa, S Sanguan Anantathanasarn

Publikováno v: Applied Surface Science. 190:343-347

A novel surface passivation technique for GaAs using an ultrathin GaN interface control layer (GaN ICL) formed by surface nitridation was characterized by ultrahigh vacuum (UHV) photoluminescence (PL) and capacitance–voltage (C–V) measurements. T

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dd060221a097dafe1430818fcb8900f0
https://doi.org/10.1016/s0169-4332(01)00840-6

InAs-InP (1.55-µm region) quantum-dot microring lasers

Autor: S Sanguan Anantathanasarn, Youcai Zhu, R Richard Nötzel, Y.S. Oei, MT Martin Hill, P.J. van Veldhoven, MK Meint Smit

Publikováno v: IEEE Photonics Technology Letters, 20(6), 446-448. Institute of Electrical and Electronics Engineers

In this letter, we demonstrate electrically pumped continuous-wave lasing at room temperature in microring lasers, which employ a quantum-dot gain medium. Lasing occurs in the important 1.55-mum telecom wavelength range. The 2-mum-wide ring waveguide

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76089c0ddb5bd54615e2cad58b1bdca6
https://doi.org/10.1109/LPT.2008.916963

1.55-µm range InAs-InP (100) quantum-dot Fabry-Pérot and ring lasers using narrow deeply etched ridge waveguides

Autor: MK Meint Smit, S Sanguan Anantathanasarn, R Richard Nötzel, Yohan Barbarin, Y.S. Oei, Erwin Bente

Publikováno v: IEEE Photonics Technology Letters, 18(24), 2644-2646. Institute of Electrical and Electronics Engineers

In this letter, we report on the fabrication and characterization of InAs-InP (100) quantum-dot (QD) Fabry-Perot and ring lasers, lasing in the 1.55-mum wavelength range and employing narrow deeply etched ridge waveguides (1.65 mum width). The perfor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f06c8a6855be74b63cd380332b04660
https://doi.org/10.1109/LPT.2006.887382

Passively Mode-Locked 4.6 and 10.5 GHz Quantum Dot Laser Diodes Around 1.55 mu m With Large Operating Regime

Autor: MK Meint Smit, YS Yok-Siang Oei, Wim Ubachs, A. Renault, Erwin Bente, Martijn J. R. Heck, K.S.E. Eikema, R Richard Nötzel, S Sanguan Anantathanasarn

Publikováno v: Heck, M J R, Renault, A A L, Bente, E A J M, Oei, Y S, Smit, M K, Eikema, K S E, Ubachs, W M G, Anantathanasarn, S & Notzel, R 2009, ' Passively Mode-Locked 4.6 and 10.5 GHz Quantum Dot Laser Diodes Around 1.55 mu m With Large Operating Regime ', IEEE Journal of Selected Topics in Quantum Electronics, vol. 15, no. 3, pp. 634-643 . https://doi.org/10.1109/JSTQE.2009.2016760
IEEE Journal of Selected Topics in Quantum Electronics, 15(3), 634-643. Institute of Electrical and Electronics Engineers
IEEE Journal of Selected Topics in Quantum Electronics, 15(3), 634-643. Institute of Electrical and Electronics Engineers Inc.

Passive mode-locking in two-section InAs/InP quantum dot laser diodes operating at wavelengths around 1.55μm is reported. For a 4.6-GHz laser, a large operating regime of stable mode-locking, with RF-peak heights of over 40dB, is found for injection

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f6599de663579264c6706e7d7b2d067
https://research.vu.nl/ws/files/2481313/JSTQE-QD-MLL.pdf