Zobrazeno 1 - 9
of 9
pro vyhledávání: '"S R Shyam"'
Autor:
S R Shyam Suraj
Publikováno v:
Journal of Extension Education, Vol 35, Iss 1 (2024)
During the recent times, studies on entrepreneurship are found to shift their focus from entrepreneurcentered to environment-centered; outlining the role of entrepreneurial ecosystem in creating productive entrepreneurship. An attempt was made to map
Externí odkaz:
https://doaj.org/article/e23777b6f24a48b1b06292bbcef541bf
Publikováno v:
The Journal of Agricultural Education and Extension. 28:3-20
This study reviewed the context, organisational arrangements and institutional changes for the operation of a smallholder dairy development project, comprising multi-stakeholders in three locales. ...
Publikováno v:
2022 International Conference on Communication, Computing and Internet of Things (IC3IoT).
Autor:
Sankar, Unni Ravi, Reddy, Konda Ramanjaneya, Singh, Ajmer, Suraj, S. R. Shyam, Dixit, A. K., Kamboj, M. L., Ontera, Sunil Kumar, Ponnusamy, K., Sen, Biswajit
Publikováno v:
Indian Journal of Agricultural Economics; Jul-Sep2024, Vol. 79 Issue 3, p668-669, 2p
Autor:
Suraj, S. R. Shyam
Publikováno v:
Journal of Extension Education (JEE); Jan-Mar2023, Vol. 35 Issue 1, p6951-6960, 10p
Autor:
D. Latha, S. R. Shyam Sundar
Publikováno v:
Journal of Evidence Based Medicine and Healthcare, Vol 4, Iss 69, Pp 4152-4154 (2017)
INTRODUCTION: Post operative adhesions form one of the most common complication following abdominopelvic surgeries. the consequence of adhesion leads to lifelong morbidity and form major burden in surgeons operating for the second time. Few complicat
Publikováno v:
2017 International Conference on Intelligent Computing, Instrumentation and Control Technologies (ICICICT).
Nanowire MOSFETs are recognized as one of the most promising candidate to extend Moore's law in nanoelectronics era. These are widely accepted and studied by various research groups. Self-heating becomes important in Nanowire MOSFETs due to its ultra
Publikováno v:
2015 International Symposium on Next-Generation Electronics (ISNE).
This paper focuses on the modelling of a Top and Bottom gated Nano -GNRFET for gas sensing using Sentaurus and VASP. The models are doped separately with Phosphorus and Gallium. 32nm fabrication technology is used for modelling the Top Gated and 350n
Publikováno v:
2015 International Symposium on Next-Generation Electronics (ISNE); 2015, p1-4, 4p