Zobrazeno 1 - 10
of 50
pro vyhledávání: '"S R, Kurtz"'
Autor:
Chris Deline, Timothy J. Silverman, Rebekah L. Garris, S. R. Kurtz, Xingshu Sun, Muhammad A. Alam, Michael G. Deceglie
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which c
Autor:
S. R. Kurtz, S. W. Johnston
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:1252-1257
Both p-type and n-type dilute-nitrogen GaNAs epitaxial layers grown by metal-organic chemical vapor deposition were characterized by deep-level transient spectroscopy (DLTS). For each case, the dominant DLTS signal corresponds to an electron trap hav
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
Reversible performance changes due to light exposure frustrate repeatable performance measurements on CdTe photovoltaic modules. It is common to use extended light exposure to ensure that measurements are representative of outdoor performance. We qua
Publikováno v:
Journal of Propulsion and Power. 12:842-846
GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AMO) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illuminatio
Autor:
S. R. Kurtz, T.J. Drummond, J. A. Olsen, B. E. Hammons, A. J. Howard, I. J. Fritz, T. M. Brennan
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:1003-1008
Using atomic force microscopy (AFM), we have investigated the effects of growth temperature and dopant incorporation on the surface morphology of molecular beam epitaxy grown graded buffer layers and strained layer superlattices (SLSs) in the InGaAlA
Publikováno v:
Journal of Luminescence. :409-412
Theory and data are presented for the photoluminescence linewidth in ordered and disordered semiconductor alloys (In{sub 0.48}Ga{sub 0.52}P) at low temperatures. In disordered (ordered) systems, the linewidth is due to exciton localization (exciton-i
Publikováno v:
SPIE Proceedings.
Concentrated photovoltaics (CPV) has recently gained interest based on its scalability and expected low levelized cost of electricity. The reliability of materials used in CPV systems, however, is not well established. The current qualification test
Autor:
K C, Anderson, L T, Goodnough, M, Sayers, P T, Pisciotto, S R, Kurtz, T A, Lane, C S, Anderson, L E, Silberstein
Publikováno v:
Blood. 77:2096-2102
Autor:
W. McMahon, Scott Ward, S. R. Kurtz, J. Carapella, M.k Wanlass, Daniel J. Friedman, John F. Geisz, A. Duda, A. Ptak, J. Olson, K. Bertness, M. Steiner, A. Kibbler, C. Kramer, M. Young
Publikováno v:
Frontiers in Optics 2007/Laser Science XXIII/Organic Materials and Devices for Displays and Energy Conversion.
One strategy for helping the solar industry to grow faster is to use very high efficiency cells under concentrating optics. By using lenses or mirrors to concentrate the light, very small solar cells can be used, reducing the amount of semiconductor
Autor:
H. P. Hjalmarson, S. R. Kurtz
Publikováno v:
Applied Physics Letters. 69:949-951
To investigate the effects of strain and quantum confinement, Auger rates are calculated for an n‐type strained InAs0.9Sb0.1/In0.87Ga0.13As mid‐infrared laser structure as a function of temperature. Compressive strain in the quantum wells reduces