Zobrazeno 1 - 10
of 63
pro vyhledávání: '"S P Ahrenkiel"'
Autor:
Nan Zheng, S. Phillip Ahrenkiel
Publikováno v:
AIP Advances, Vol 7, Iss 7, Pp 075319-075319-7 (2017)
Metamorphic growth presents routes to novel nanomaterials with unique properties that may be suitable for a range of applications. We discuss self-assembled, epitaxial nanowires formed during metalorganic chemical vapor deposition of metamorphic GaAs
Externí odkaz:
https://doaj.org/article/77f0ca91e75843d9bfc09b16d8260e9e
Publikováno v:
Surface Engineering. 30:361-368
Aluminium 6061 deposited by high pressure cold spray was analysed using a transmission electron microscope (TEM) to characterise its microstructure and response to annealing to 450°C in the plane of the deposition and perpendicular to the deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fa372e423563d956267df4947987e04
https://doi.org/10.1179/1743294413y.0000000209
https://doi.org/10.1179/1743294413y.0000000209
Publikováno v:
Microscopy and Microanalysis. 23:1268-1269
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::068c3157a63095ce0df7b3db887eb714
https://doi.org/10.1017/s1431927617007000
https://doi.org/10.1017/s1431927617007000
Publikováno v:
Thin Solid Films. 516:529-532
From TEM, XRD and Raman measurements, we compare the crystallization kinetics when HWCVD and PECVD a-Si:H films, containing different initial film hydrogen contents (CH), are crystallized by annealing at 600 °C. For the HWCVD films, the nucleation r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54e636bc2743bcd79b68b478fdd1064e
https://doi.org/10.1016/j.tsf.2007.06.036
https://doi.org/10.1016/j.tsf.2007.06.036
Autor:
Lynn Gedvilas, Steve Johnston, S. P. Ahrenkiel, R. K. Ahrenkiel, J. J. Carapella, Mark Wanlass
Publikováno v:
Solar Energy Materials and Solar Cells. 91:908-918
We optimize InAs y P 1− y buffer layers and compositional grades for lattice-mismatched heteroepitaxy of Ga x In 1− x As/InAs y P 1− y double-heterostructures on InP. The strains of the active and buffer layers depend on the bulk misfit differe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3591be65b69226bfc4ba16880549270d
https://doi.org/10.1016/j.solmat.2007.02.008
https://doi.org/10.1016/j.solmat.2007.02.008
Autor:
Lynn Gedvilas, S. P. Ahrenkiel, Brian Keyes, R. K. Ahrenkiel, Helio R. Moutinho, J. J. Carapella, Mark Wanlass
Publikováno v:
Journal of Electronic Materials. 33:185-193
Low-bandgap, lattice-mismatched GaxIn1−xAs (GaInAs) grown using InAsyP1−y (InAsP) compositional-step grades on InP is a primary choice for lightabsorbing, active layers in high-efficiency thermophotovoltaic (TPV) devices. The GaInAs/InAsP double
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ebc21d72f18af4bac549e90fe2a4ada
https://doi.org/10.1007/s11664-004-0178-7
https://doi.org/10.1007/s11664-004-0178-7
Autor:
Olga I. Micic, S. P. Ahrenkiel, Jovan M. Nedeljković, A. Miedaner, Calvin J. Curtis, Arthur J. Nozik
Publikováno v:
Nano Letters. 3:833-837
InP nanorods and nanowires in the diameter range of 30-300 A and 100-1000 A in length were synthesized. For the preparation of nanorods, we used an organometallic precursor that decomposes thermally into InP and In metal particles. The latter serves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c306d8e3a90998e8c4210f196a8ac207
https://doi.org/10.1021/nl034152e
https://doi.org/10.1021/nl034152e
Autor:
S. Kim, S. Kincal, H. Neumann, Oscar D. Crisalle, S. P. Ahrenkiel, B. J. Stanbery, Chih-Hung Chang, Timothy J. Anderson, G. Lippold
Publikováno v:
Journal of Applied Physics. 91:3598-3604
Migration-enhanced epitaxy (MEE) has been successfully employed to grow epitaxial films of the ternary compound CuInSe2 on (001) GaAs that exhibit distinct coexisting domains of both a nonequilibrium crystallographic structure characterized by CuAu (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bff46113482f52843a747fd283abac9
https://doi.org/10.1063/1.1446234
https://doi.org/10.1063/1.1446234
Autor:
Ray D. Twesten, Eric D. Jones, David M. Follstaedt, J. Mirecki Millunchick, S. R. Lee, Angelo Mascarenhas, S. P. Ahrenkiel, Yong Zhang, John L. Reno, Andrew G. Norman
Publikováno v:
Thin Solid Films. 357:31-34
We present low temperature photoluminescence data for a series of spontaneous lateral composition modulation in (AlAs){sub m}/(InAs){sub n} short period superlattices on InP with differing average lattice constants, i.e., varying global strain. The l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb6b5ebc5dd5f11503231cf5ed7e7bf8
https://doi.org/10.1016/s0040-6090(99)00470-8
https://doi.org/10.1016/s0040-6090(99)00470-8
Autor:
Andrew G. Norman, S. R. Lee, David M. Follstaedt, A. Mascarenhas, Ray D. Twesten, Eric D. Jones, S. P. Ahrenkiel, J. Mirecki Millunchick, John L. Reno
Publikováno v:
Physical Review B. 60:13619-13635
The formation of quantum wires has much interest due to their novel electronic properties which may lead to enhanced optoelectronic device performance and greater photovoltaic efficiencies. One method of forming these structures is through spontaneou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e3c8d1681dc5ab9dabc663bb48e7d4c
https://doi.org/10.1103/physrevb.60.13619
https://doi.org/10.1103/physrevb.60.13619