Výsledky vyhledávání

A dynamic study of pad structure impact on bond pad/low-K layer stress in copper wire bond

Autor: F. Clive, R. Hyman, Y B. Yang, William Ramroth, N. Kumar, S. Nathapong, D. John

Publikováno v: 2012 IEEE 14th Electronics Packaging Technology Conference (EPTC).

In recent years, many OSAT (Outsourced Semiconductor Assembly and Test) companies start to explore copper wire bond process, which is believed to be able to reduce the IC packaging cost. Copper wire also shows better electrical performance especially

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e2c2471349ba185e4061d088dfdb97bb
https://doi.org/10.1109/eptc.2012.6507163

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Multi chip stacking & reliability challenges using TSV-micro C4 solder interconnection for FCCSP TSV package

Autor: K. Y. Au, Y.B. Yang, S Nathapong, Y. S. Koh Drake, P. L Ong Wilson, S. L. Kriangsak, Y. F. Zhang, J.D. Beleran

Publikováno v: 2011 IEEE 13th Electronics Packaging Technology Conference.

Through silicon via (TSV) is a three-dimensional packaging technology involving vertical chips stacking using metal-filled via holes and bumps. TSV stacked chip drastically reduces interconnect distance than conventional multi-stack wire bond silicon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e959db6a93edf0b3156d0cdc5198a0ff
https://doi.org/10.1109/eptc.2011.6184493

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Design for reliability of Hi-density Leadless Array (HLA™) package

Autor: T. Edward, P. Serafin, S. Nathapong, C. Surasit, Y.B. Yang, B.Y. Zheng

Publikováno v: 2011 IEEE 13th Electronics Packaging Technology Conference.

HLA™ (Hi-density Leadframe Array) is a new leadframe-based technology that breaks the legacy QFN lead finger constraints and offers a solution to high I/O package requirements in the industry. It can replace many types of leadframe and BGA technolo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f82283edc7ac5f51ed59250c2b482c8
https://doi.org/10.1109/eptc.2011.6184497

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Reliability design for exposed pad and low-profile leadframe package

Autor: C. Surasit, X. R. Zhang, S. Nathapong, Y. W. Liang, Y. B. Yang, J. C. Teddy, W. H. Zhu

Publikováno v: 2010 11th International Conference on Electronic Packaging Technology & High Density Packaging.

This paper focused on the delamination study of low profile leadframe package with exposed pad (eLQFP). In this type of package, a specification of silver plating area is required for bond pad. With the shrinkage of the non-plating pad area, and beca

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eb2a765f2b1c816ffdbc50e75c57fd69
https://doi.org/10.1109/icept.2010.5582882

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3D interconnection process development and integration with low stress TSV

Autor: Chee Houe Khong, W. S. Lee, Soon Wee Ho, C. H. Toh, Li Shiah Lim, S Nathapong, S. P. Chew, T. T. Chua, C. Ng, Hongyu Li, S. L. Kriangsak, X. F. Pang, Ebin Liao

Publikováno v: 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC).

The 3 D interconnect technology with Thru Silicon Via (TSV) have gained tremendous advancement in recent years. Final adoption of TSV technologies requires a robust and cost competitive TSV processes. Sidewall plated TSV with polymer filling can redu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::73ab3cd014594ce0750fae486279e72d
https://doi.org/10.1109/ectc.2010.5490728

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Temporary Bonding of Wafer to Carrier for 3D-Wafer Level Packaging

Autor: S. Nathapong, Pandi C. Marimuthu, M.H. Shuangwu, D. Pang

Publikováno v: 2008 10th Electronics Packaging Technology Conference.

With great demand of high-end applications such as high-integration microelectronics, system-in-packaging (SiP), power application and flexible ICs, a device wafer needs to be thinned down and further structured, for example, fabrication of through-s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::493419ec9a33d42e082d04fd679ef751
https://doi.org/10.1109/eptc.2008.4763468

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