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Spontaneous Emission Amplification in Silver—Organic Periodic Structures and Tamm Plasmon Structures
Autor:
Andrew P. Monkman, Konstantin A. Ivanov, S. Mikhrin, Daniel de Sa Pereira, M. A. Kaliteevski, C. Menelaou, K. M. Morozov, N. Selenin
Publikováno v:
Semiconductors. 52:1861-1864
We have investigated Tamm plasmon structure and periodic metal-dielectric structures with active organic CBP (N,N-dicarbazolyl-4,4-biphenyl) layer. Tamm structure is based on SiO2/TiO2 5 pairs DBR, with 26 nm CBP and 50 nm silver layer on the top of
Autor:
A. E. Gubenko, M. S. Buyalo, V. N. Nevedomsky, I. M. Gadzhiyev, A. S. Payusov, Efim L. Portnoi, S. S. Mikhrin
Publikováno v:
Technical Physics Letters. 44:965-968
We have investigated two-sectional semiconductor lasers with an active region comprising five layers of InGaAs quantum dots, emitting in the spectral range near 1.06 μm. Regimes of passive mode-locking, passive Q-switching, and mode-locking with pul
Autor:
C. Menelaou, Konstantin A. Ivanov, K. M. Morozov, N. Selenin, S. Mikhrin, Daniel de Sa Pereira, M. A. Kaliteevski, Andrew P. Monkman
Publikováno v:
Semiconductors. 52:1420-1423
Spontaneous-emission enhancement in a Tamm plasmon microcavity with an active region with organic material 4.4'-bis(N-carbazolyl)-1.1'-biphenyl (CBP) is theoretically and experimentally studied. The microcavity consisted of a Bragg reflector made of
Autor:
M. A. Kaliteevski, Andrew P. Monkman, K. M. Morozov, Konstantin A. Ivanov, C. Menelaou, S. Mikhrin, Daniel de Sa Pereira, N. Selenin
Publikováno v:
Journal of physics: conference series, 2018, Vol.1135, pp.012034 [Peer Reviewed Journal]
We provide an experimental investigation of a Purcell enhancement in a silver-organic periodic structure with an organic material CBP (4,4'-Bis(N-carbazolyl)-1,1'-biphenyl). Were fabricated two structures using a thermal evaporation technique with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8e181a8d0475e747730a7afcef870b0
http://dro.dur.ac.uk/29555/1/29555.pdf
http://dro.dur.ac.uk/29555/1/29555.pdf
Autor:
V. Jucienė, S. S. Mikhrin, V. S. Mikhrin, K. Požela, J. Požela, A. Sužiedėlis, A. S. Shkolnik
Publikováno v:
Semiconductors. 43:1590-1596
The scattering rate of electrons in a quantum well by localized polar optical and interface phonons is considered. The dependence of the force of the electron-phonon interaction on the frequency of optical phonons in materials of the heterostructure
Autor:
S. Mikhrin, N. Selenin, M. A. Kaliteevski, Daniel de Sa Pereira, C. Menelaou, Konstantin A. Ivanov, K. M. Morozov, Andrew P. Monkman
Publikováno v:
Journal of physics: conference series, 2018, Vol.1135, pp.012082 [Peer Reviewed Journal]
We provide a theoretical and experimental investigation of a Purcell enhancement in a Tamm-plasmon based microcavity structure with an organic (4,4'-Bis(N-carbazolyl)−l,l'- biphenyl (CBP)) active layer. The microcavity structure was fabricated usin
Autor:
Edik U. Rafailov, D. D. Livshits, M. Butkus, Craig James Hamilton, Oleg G. Okhotnikov, S. S. Mikhrin, Jussi Rautiainen, G. G. Malcolm, Igor Krestnikov
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics
Optically pumped quantum dot (QD)-based semiconductor disk lasers (SDLs) have been under intense research after their first demonstration and important enhancements of their parameters have been achieved since then. In this paper, we present recent d
Autor:
A. V. Antonov, A. N. Sofronov, L. V. Gavrilenko, V. I. Gavrilenko, Alexey E. Zhukov, G. A. Melentyev, Vadim A. Shalygin, D. A. Firsov, V. Yu. Panevin, V. S. Mikhrin, A. V. Andrianov, Leonid E. Vorobjev, A. P. Vasil’ev, V. Ya. Aleshkin, A. O. Zakhar’in
Publikováno v:
Semiconductors. 44:1394-1397
Terahertz emission spectra in a longitudinal electric field and lateral photoconductivity spectra under terahertz illumination have been studied in structures with GaAs/AlGaAs quantum wells (QWs). It is shown that the spectra contain features associa
Autor:
A. M. Nadtochy, Alexey E. Zhukov, S. A. Blokhin, Nikolai N. Ledentsov, A. S. Payusov, S. S. Mikhrin, E. S. Shatalina, A. R. Kovsh, Mikhail V. Maximov, V. M. Ustinov, A. V. Savelyev
Publikováno v:
Semiconductors. 44:1308-1312
With the help of the photocurrent spectroscopy, the mechanism of emission of charge carriers from energy levels of the (In,Ga)As/(Al,Ga)As quantum dots of different design are studied. Thermal activation is shown to be the main mechanism of carrier e