Zobrazeno 1 - 10
of 828
pro vyhledávání: '"S Mantl"'
Autor:
G. V. Luong, S. Strangio, A. T. Tiedemann, P. Bernardy, S. Trellenkamp, P. Palestri, S. Mantl, Q. T. Zhao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1033-1040 (2018)
A half SRAM cell with strained Si nanowire complementary tunnel-FETs (TFETs) was fabricated and characterized to explore the feasibility and functionality of 6T-SRAM based on TFETs. Outward-faced n-TFETs are used as access-transistors. Static measure
Externí odkaz:
https://doaj.org/article/a625054c5f9e4591b41c64cc378915ee
Publikováno v:
Solid-State Electronics. 143:62-68
In this paper we present a silicon tunnel FET based on line-tunneling to achieve better subthreshold performance. The fabricated device shows an on-current of Ion = 2.55 × 10−7 A/µm at Vds = Von = Vgs − Voff = −0.5 V for an Ioff = 1 nA/µm an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::385da63df32ad4f1cd7b0ab0d6d3e737
https://doi.org/10.1016/j.sse.2018.01.007
https://doi.org/10.1016/j.sse.2018.01.007
Autor:
S. Mantl, Qing-Tai Zhao, Stefan Trellenkamp, P. Bernardy, G. V. Luong, Keyvan Narimani, A. T. Tiedemann
Publikováno v:
IEEE Electron Device Letters. 37:950-953
In this letter, we present complementary tunneling field-effect transistors (CTFETs) based on strained Si with gate all around nanowire structures on a single chip. The main focus is to suppress the ambipolar behavior of the TFETs with a gate–drain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0be3e37486992f787f0abd639ae71967
https://doi.org/10.1109/led.2016.2582041
https://doi.org/10.1109/led.2016.2582041
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 62:1-39
In this review article, we address key material parameters as well as the fabrication and application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an indirect to a fundamental direct bandgap material will be discuss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::917b5d149fddeb50ce4f77a7cb74cbd2
https://doi.org/10.1016/j.pcrysgrow.2015.11.001
https://doi.org/10.1016/j.pcrysgrow.2015.11.001
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::882e051c734e01bda04ea4e014959dee
https://doi.org/10.7567/ssdm.2018.c-7-06
https://doi.org/10.7567/ssdm.2018.c-7-06
Gate stack and Ni(SiGeSn) metal contacts formation on low bandgap strained (Si)Ge(Sn) semiconductors
Autor:
J.M. Hartmann, Peter Zaumseil, A. T. Tiedemann, Dan Buca, Uwe Breuer, N. von den Driesch, S. Mantl, C. Schulte-Braucks, Q. T. Zhao
Publikováno v:
2018 18th International Workshop on Junction Technology (IWJT).
GeSn is a promising material to make the most of two worlds [1]: (i) its direct bandgap for high Sn contents yields high-mobility and decent optical properties; (ii) as a CMOS compatible material, it benefits from the maturity of group IV semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f2419b79984bf1b14d923c5fa4e6289
https://doi.org/10.1109/iwjt.2018.8330309
https://doi.org/10.1109/iwjt.2018.8330309
Autor:
Mingshan Liu, Dan Buca, S. Glass, Stefan Trellenkamp, Q. T. Zhao, Konstantin Mertens, S. Mantl
Publikováno v:
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
Towards gate-all-around (GAA) FETs, we present the top-down realization of vertical Ge nanowires (NWs) with defect-free sidewall and perfect anisotropy. The NW patterns are transferred by a novel inductively coupled plasma reactive ion etching (ICP-R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07a8bdf7f6ee731a1045af7d1fbf2cac
https://doi.org/10.1109/ulis.2018.8354771
https://doi.org/10.1109/ulis.2018.8354771
Autor:
A. Besmehn, J. Schubert, K. Rahmanizadeh, Gang Niu, Gustav Bihlmayer, Martina Luysberg, S. Mantl, M. Schnee, T. Schroeder, Martin Mikulics, A. Fox, Hilde Hardtdegen, F. Wendt, A. Schäfer
Publikováno v:
Journal of Alloys and Compounds. 651:514-520
Four different polymorphs of GdScO 3 are assessed theoretically and experimentally with respect to their suitability as a dielectric. The calculations carried out by density functional theory reveal lattice constants, band gaps and the energies of fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71c89f125927baaadc11b8c38a84c0b2
https://doi.org/10.1016/j.jallcom.2015.08.135
https://doi.org/10.1016/j.jallcom.2015.08.135
Autor:
Sebastian Blaeser, Stefan Trellenkamp, Dan Buca, G. V. Luong, S. Mantl, Hans Sigg, A. Schafer, Lars Knoll, Qing-Tai Zhao, Martin J. Süess, Konstantin Bourdelle
Publikováno v:
Solid-State Electronics. 108:19-23
In this work we demonstrate the benefit of high uniaxial tensile strain on the performances of Si nanowire (NW) MOSFETs. High uniaxial tensile strained Si NWs were realized by exploiting a “bridge technology” based on patterning of an initial bia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb54b92fb103d73ea17e40d12ab03802
https://doi.org/10.1016/j.sse.2014.12.015
https://doi.org/10.1016/j.sse.2014.12.015
Autor:
S. Richter, A. Schafer, S. Mantl, J.M. Hartmann, Qing-Tai Zhao, Stefan Trellenkamp, Konstantin Bourdelle
Publikováno v:
Solid-State Electronics. 108:97-103
Complementary MOSFET and Tunnel-FET inverters based on tri-gated strained Si nanowire arrays are demonstrated. The voltage transfer characteristics as well as the inverter supply currents of both inverter types are analyzed and compared. A degradatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca1efa478313538a3b5ec49b5b2d6588
https://doi.org/10.1016/j.sse.2015.02.018
https://doi.org/10.1016/j.sse.2015.02.018