Zobrazeno 1 - 10
of 33
pro vyhledávání: '"S M Sapozhnikov"'
Autor:
P. V. Arakcheev, V. L. Bezdelov, E. V. Buryi, A. I. Danilov, S. M. Sapozhnikov, D. A. Semerenko, I. Yu. Udarov, A. L. Shlemenkov
Publikováno v:
Instruments and Experimental Techniques. 65:797-803
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00cc0c395f806e179423cc827e1f3680
https://doi.org/10.1134/s0020441222050013
https://doi.org/10.1134/s0020441222050013
Publikováno v:
Journal of Communications Technology and Electronics. 66:1413-1416
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c2903d57e673ed839e578275191e5c
https://doi.org/10.1134/s1064226921120159
https://doi.org/10.1134/s1064226921120159
Autor:
A. Yu. Andreev, A. V. Lobintsov, A. A. Padalitsa, Maxim A. Ladugin, S. M. Sapozhnikov, K. Yu. Telegin, A. N. Aparnikov, I. V. Yarotskaya, N. A. Volkov, A. A. Marmalyuk
Publikováno v:
Quantum Electronics. 50:489-492
The influence of doping of waveguide layers on the output characteristics of lasers based on AlGaAs/GaAs double separate-confinement heterostructures is analysed. The heterostructures with narrow and broadened waveguides are studied. Samples of laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1ff0793ffa2539aff6094819e954f82
https://doi.org/10.1070/qel17249
https://doi.org/10.1070/qel17249
Autor:
A. V. Lobintsov, V V Krichevskii, Yu V Kurnyavko, T. A. Bagaev, Nikita A. Pikhtin, V P Konyaev, S. M. Sapozhnikov, A. A. Podoskin, V. A. Simakov, A. A. Marmalyuk, A. I. Danilov, A A Padalitsa, Sergey O. Slipchenko, Maxim A. Ladugin
Publikováno v:
Quantum Electronics. 50:1001-1003
A triple laser – thyristor, i. e., a semiconductor laser with three emitting sections monolithically integrated with an electronic switch (thyristor) is experimentally studied. For comparison, the output characteristics of single and double laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f27d73987dcbb84959b20135401042e6
https://doi.org/10.1070/qel17400
https://doi.org/10.1070/qel17400
Autor:
A. V. Lobintsov, A A Padalitsa, Sergey O. Slipchenko, S. M. Sapozhnikov, Nikita A. Pikhtin, V P Konyaev, A. I. Danilov, A. A. Marmalyuk, T. A. Bagaev, Yu V Kurnyavko, V. A. Simakov, A. A. Podoskin, V V Krichevskii, M. V. Zverkov, Maxim A. Ladugin
Publikováno v:
Quantum Electronics. 49:1011-1013
Comparative experiments are performed on a semiconductor laser with different numbers (one or two) of emitting sections monolithically integrated with an electronic switch (thyristor). It is shown that the functional integration of a laser with a thy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72b4cfc7c8528dda01ed5c4091e2c102
https://doi.org/10.1070/qel17104
https://doi.org/10.1070/qel17104
Autor:
V. A. Simakov, Maxim A. Ladugin, A A Padalitsa, A. A. Marmalyuk, V I Romantsevich, V. N. Svetogorov, Yu. L. Ryaboshtan, S. M. Sapozhnikov, K V Kurnosov, A. V. Lobintsov, V D Kurnosov, A. V. Ivanov
Publikováno v:
Quantum Electronics. 49:519-521
This paper presents an experimental study of AlGaInAs/InP semiconductor lasers with different barrier layers. The use of strained layers with an increased band gap as blocking barriers limiting carrier leakage is shown to increase the output power of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80a2c90cd2ca04918ee659e7d5949957
https://doi.org/10.1070/qel17032
https://doi.org/10.1070/qel17032
Autor:
T. A. Bagaev, A. A. Marmalyuk, I. V. Yarotskaya, P. V. Gorlachuk, Yu V Kurnyavko, S. S. Zarubin, I. I. Zasavitskii, V. A. Simakov, S. M. Sapozhnikov, A. V. Lobintsov, A. Yu. Andreev, K. Yu. Telegin, A A Padalitsa, Maxim A. Ladugin, A. I. Danilov
Publikováno v:
Inorganic Materials. 53:891-895
Short-period GaAs/AlGaAs superlattices, an active region, and a quantum cascade laser heterostructure have been grown by metalorganic vapor phase epitaxy, and their characteristics have been studied by high-resolution X-ray diffraction, transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f91261bd38862575b1bad010818c1bc
https://doi.org/10.1134/s0020168517090138
https://doi.org/10.1134/s0020168517090138
Autor:
T. A. Bagaev, Yu P Koval, Maxim A. Ladugin, S. M. Sapozhnikov, A. V. Lobintsov, V P Konyaev, V. A. Simakov, A. A. Marmalyuk
Publikováno v:
Quantum Electronics. 48:993-995
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70fc02fd2268762abe8e829fa79eced1
https://doi.org/10.1070/qel16812
https://doi.org/10.1070/qel16812
Autor:
T. A. Bagaev, A. Yu. Andreev, A A Padalitsa, Maxim A. Ladugin, A N Zubov, A. V. Lobintsov, P. V. Gorlachuk, S. M. Sapozhnikov, A. A. Marmalyuk, I I Zasavitskii
Publikováno v:
Quantum Electronics. 46:447-450
A pulsed quantum cascade laser emitting in the wavelength range 9.5–9.7 μm at 77.4 K is developed based on the GaAs/Al0.45Ga0.55As heteropair. The laser heterostructure was grown by MOCVD. The threshold current density was 1.8 kA cm-2. The maximum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c727d46b5520fd96a497fb81dba4f1a3
https://doi.org/10.1070/qel16058
https://doi.org/10.1070/qel16058
Autor:
M A Ladugin, A A Marmalyuk, A A Padalitsa, K Yu Telegin, A V Lobintsov, S M Sapozhnikov, A I Danilov, A V Podkopaev, V A Simakov
Publikováno v:
Quantum Electronics. 47:693-695
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb2548b236f7cda87572ebf3b1ba3827
https://doi.org/10.1070/qel16441
https://doi.org/10.1070/qel16441