Zobrazeno 1 - 10
of 80
pro vyhledávání: '"S M Islam"'
Autor:
Siba P. Midya, Subal Mondal, Abu S. M. Islam, Ambreen Rashid, Sahidul Mondal, Ankan Paul, Pradyut Ghosh
Publikováno v:
Organic Letters. 24:4438-4443
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f89d33a56f2c3a360213fc7f2410e276
https://doi.org/10.1021/acs.orglett.2c01662
https://doi.org/10.1021/acs.orglett.2c01662
Autor:
S. M. Islam, Golam Mohammod Mostakim, Mst. Mansura Khan, Md. Khalilur Rahman, Md. Moniruzzaman
Publikováno v:
International Journal of Environmental Science and Technology. 16:7535-7544
Organophosphate pesticides are extravagantly used in worldwide context to get rid of insects. Due to their relevance and edges in agriculture, organophosphate pesticide can effortlessly stretch to the aquatic ecological units and, correspondingly, ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8856739fbe477cede59d13f0682037e7
https://doi.org/10.1007/s13762-019-02425-0
https://doi.org/10.1007/s13762-019-02425-0
Autor:
Jimy Encomendero, Faiza Afroz Faria, S. M. Islam, Vladimir Protasenko, Sergei Rouvimov, Berardi Sensale-Rodriguez, Patrick Fay, Debdeep Jena, Huili Grace Xing
Publikováno v:
Physical Review X, Vol 7, Iss 4, p 041017 (2017)
For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier
Externí odkaz:
https://doaj.org/article/10f6ac5191db48bfbc88c77f02eab6b0
Autor:
Debdeep Jena, Anthony J. Hoffman, Zhaoyuan Fang, Huili Grace Xing, Irfan Khan, Leland Nordin, S. M. Islam, Viktor A. Podolskiy, Daniel Wasserman, Junchi Lu, Milan Palei, Evan Simmons, Owen Dominguez
Publikováno v:
Optics express. 28(19)
We demonstrate coupling to and control over the broadening and dispersion of a mid-infrared leaky mode, known as the Berreman mode, in samples with different dielectric environments. We fabricate subwavelength films of AlN, a mid-infrared epsilon-nea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::470b56f200a2b3f79faa5180bf576809
https://pubmed.ncbi.nlm.nih.gov/32988126
https://pubmed.ncbi.nlm.nih.gov/32988126
Autor:
Mingda Zhu, S. M. Islam, Wenshen Li, Manyam Pilla, Zongyang Hu, Xiang Gao, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Kevin Lee
Publikováno v:
IEEE Transactions on Electron Devices. 65:2558-2564
GaN vertical trench-MOSFETs incorporating molecular beam epitaxy (MBE) regrown channel are developed and investigated. The channel regrowth by MBE prevents repassivation of the p-type GaN body while promising higher channel mobility. Two different de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efe17d5060da15460c80fd82ee4ff0b8
https://doi.org/10.1109/ted.2018.2829125
https://doi.org/10.1109/ted.2018.2829125
Autor:
S. M. Islam, Kenneth E. Goodson, Debdeep Jena, Ankita Katre, Bozo Vareskic, Huili Grace Xing, Runjie Lily Xu, Natalio Mingo, Eric Pop, Miguel Muñoz Rojo, Aditya Sood
Publikováno v:
Journal of Applied Physics, 126(18):185105. American Institute of Physics
Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here we measure the thermal conductivity of crystalline AlN by the 3${\omega}$ method,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81adc0d92ae470f81fcdc82957c800f6
https://research.utwente.nl/en/publications/cd938673-b343-4bd0-a789-3d7509efd011
https://research.utwente.nl/en/publications/cd938673-b343-4bd0-a789-3d7509efd011
Autor:
Md. Abubakar Siddik, S. M. Islam, Sanjida Tasnim Shorno, Sumonto Sarker, Md. Ariful Islam Khan
Publikováno v:
2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT).
The ongoing relentless innovation of technologies like Big data, cloud computing, virtual reality is creating the need for more secure, further reliable, more scalable ultra fast networks. For meeting these objectives Software Defined Networking (SDN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f015a3612142618976c05eab02468a89
https://doi.org/10.1109/icasert.2019.8934553
https://doi.org/10.1109/icasert.2019.8934553
Autor:
Kevin Lee, Debdeep Jena, S. M. Islam, Huili Xing, Vladimir Protasenko, Shyam Bharadwaj, Jai Verma
Publikováno v:
Light-Emitting Diodes ISBN: 9783319992105
Deep ultraviolet light-emitting diodes (200–280 nm) have many potential applications in diagnostics, therapeutics, security, and tanning. But, the state-of-the-art LEDs suffer from low external quantum efficiency (< 20%). The external quantum effic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1cbc9ee2008c1513de7c2880d17bbe
https://doi.org/10.1007/978-3-319-99211-2_10
https://doi.org/10.1007/978-3-319-99211-2_10
Autor:
Jahir, Ahmed, Riad H, Rakib, Mohammed M, Rahman, Abdullah M, Asiri, Iqbal A, Siddiquey, Saiful S M, Islam, Mohammad A, Hasnat
Publikováno v:
ChemPlusChem. 84(2)
FeS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::b43ab3633a1c37905d375e2b230ab763
https://pubmed.ncbi.nlm.nih.gov/31950691
https://pubmed.ncbi.nlm.nih.gov/31950691