Zobrazeno 1 - 10
of 86
pro vyhledávání: '"S M, Zubkova"'
Autor:
S. M. Zubkova, V. L. Bekenev
Publikováno v:
Physics of the Solid State. 60:2078-2090
The theoretical studies and ab initio calculations have been carried out for the first time for atomic and electronic structure of four variants of 3C-SiC(111)-( $$2\sqrt 3 \times 2\sqrt 3 $$ )-R30° surface with Si- terminated surface: initial, rela
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b43d111c72ae2bdebbff066a441f961c
https://doi.org/10.1134/s1063783418100037
https://doi.org/10.1134/s1063783418100037
Autor:
S. M. Zubkova, V. L. Bekenev
Publikováno v:
Physics of the Solid State. 60:191-206
The atomic and electron structure of four variants of polar (111)-(2 × 2) surfaces in ZnSe and CdSe terminated by a cation, namely, the ideal, relaxed, reconstructed, and relaxed after reconstruction surfaces, are calculated for the first time from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25f2c966c83f1e42150b9cccbdc15d4d
https://doi.org/10.1134/s1063783418010031
https://doi.org/10.1134/s1063783418010031
Autor:
V. L. Bekenev, S. M. Zubkova
Publikováno v:
Semiconductors. 51:23-33
The atomic and electronic structure of four variants of Te-terminated CdTe(111)B–(2√3 × 4) orthogonal polar surface (ideal, relaxed, reconstructed, and reconstructed with subsequent relaxation) are calculated ab initio for the first time. The su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cc778ae469ae16a35d6d69b2bb5fdd6
https://doi.org/10.1134/s106378261701002x
https://doi.org/10.1134/s106378261701002x
Autor:
S. M. Zubkova, V. L. Bekenev
Publikováno v:
Physics of the Solid State. 57:1878-1887
Based on data of scanning tunneling microscopy, ab initio calculations of the electronic structure were performed for the first time for four variants of Cd-terminated polar CdTe(111)A-(2 × 2) surfaces, namely, ideal, relaxed, reconstructed with a C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5a84d49cafd3cc7db2d423bbb9876b2
https://doi.org/10.1134/s1063783415090048
https://doi.org/10.1134/s1063783415090048
Publikováno v:
Semiconductors. 41:886-896
The temperature dependence of the energies of some characteristic energy extrema at the Γ, L, K, M, A, and H high-symmetry points of the Brillouin zone and the energies of the main interband transitions in hexagonal modifications of ZnS, ZnSe, ZnTe,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5437f56e463aa8bf404a372b38d11dd6
https://doi.org/10.1134/s1063782607080040
https://doi.org/10.1134/s1063782607080040
Publikováno v:
Semiconductors. 41:641-650
The method of empirical pseudopotential was used for the first time for the calculation of the temperature dependence of the energy extrema at the Г L, K, M, A, and H high-symmetry points of the Brillouin zone for hexagonal modifications of gallium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebde57fa81ca0bf3c26a5ec346998ece
https://doi.org/10.1134/s106378260706005x
https://doi.org/10.1134/s106378260706005x
Publikováno v:
The European Physical Journal Applied Physics. 33:161-167
The breakdown electroluminescence spectra of individual microplasmas in a p - n -junction with microplasma breakdown, which was prepared on a 3C-SiC crystal, have been investigated. The clear periodic structure of an oscillatory nature, which was dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2fb278ca17fc67ef53e957961424885
https://doi.org/10.1051/epjap:2006023
https://doi.org/10.1051/epjap:2006023
Publikováno v:
Semiconductors. 37:239-248
The temperature dependences of significant energy extrema at the high-symmetry points Γ, X, L, K, M, A, and H of the Brillouin zone in the cubic and hexagonal modifications of SiC, as well as the energies of the main interband transitions at these p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44aa783ad4068dd614e95e9ba35ce9e5
https://doi.org/10.1134/1.1561511
https://doi.org/10.1134/1.1561511
Publikováno v:
Semiconductors. 34:272-276
The consistent application of the perturbation theory to the solution of the Schrodinger equation describing the shallow-donor state in multivalley semiconductors has allowed us to obtain a secular equation of an order equal to the number of valleys.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75d0cbc1eb035812d972dc78417fdf1b
https://doi.org/10.1134/1.1187970
https://doi.org/10.1134/1.1187970
Publikováno v:
Semiconductors. 32:521-525
The binding energies of four complexes — exciton + charged impurity, exciton + neutral impurity — were calculated by a variational method in semiconductors with diamond and zinc blende structure taking into account the degeneracy of the valence-b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e126e5cfd12d95400b66377ad8ec9d2b
https://doi.org/10.1134/1.1187555
https://doi.org/10.1134/1.1187555