Zobrazeno 1 - 10
of 28
pro vyhledávání: '"S L Delage"'
Publikováno v:
Semiconductor Science and Technology
We propose a novel model approach for temperature evaluation in the channel region of a InAlN/AlN/gallium nitride high electron mobility transistor (HEMT) due to self-heating effects. The heat transfer in a HEMT device has been investigated experimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8025f67f0e546ac3f4baf1e676a4cc6a
https://doi.org/10.1088/1361-6641/abd15a
https://doi.org/10.1088/1361-6641/abd15a
Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
In this work an average channel temperature of power InAIN/GaN HEMT prepared on SiC substrate has been investigated using quasi-static 1-V characterization. The analysis of drain current change depending on source resistance, threshold voltage and sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cc48771ac9bda5bb2a36501d8f8cc28
https://doi.org/10.1109/asdam.2018.8544600
https://doi.org/10.1109/asdam.2018.8544600
Autor:
J.C. Jacquet, O. Patard, P. Altuntas, C. Dua, C. Potier, M. Oualli, Stéphane Piotrowicz, E. Chartier, N. Michel, J. Gruenenpuett, S. L. Delage, P. Gamarra, C. Lacam, Christophe Chang
Publikováno v:
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC).
This paper presents the simulated results and first small-signal on-wafer measurements of two MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The two three-stages MMIC1 & MMIC2 are operating within a bandwi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::414e23fca3d67917afa51a1fe1442672
https://doi.org/10.1109/inmmic.2018.8430000
https://doi.org/10.1109/inmmic.2018.8430000
Publikováno v:
Semiconductor Science and Technology. 35:025006
An improved method of average channel temperature and channel temperature profile determination is introduced in this paper applied to AlGaN/GaN HEMT using quasi-static I-V characterization and external heater. Particular HEMT resistances and thresho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2c1fce32001d62759aca946bf361d4f
https://doi.org/10.1088/1361-6641/ab5d85
https://doi.org/10.1088/1361-6641/ab5d85
Publikováno v:
Semiconductor Science and Technology. 34:065021
This paper proposes a novel method of average channel temperature and channel temperature profile determination is discussed in theoretical part and subsequently applied to InAlN/AlN/GaN HEMT using quasi-static I–V characterization supported by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::992cd938bffe9c9cd3c7b73a7c8a7afc
https://doi.org/10.1088/1361-6641/ab1737
https://doi.org/10.1088/1361-6641/ab1737
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 43:293-298
The increasing use of Heterojunction Bipolar Transistors (HBT's) in microwave analog circuits requires a valid description of these devices by means of an equivalent circuit including noise sources in an extended bias and frequency range. This paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::109e2b6dcbc2c28461af206591674b68
https://doi.org/10.1109/22.348087
https://doi.org/10.1109/22.348087
Publikováno v:
Philosophical Magazine B. 63:443-455
The energy distribution of grain-boundary states is determined for polycrystalline silicon films grown under ultra-high vacuum conditions. Conductivity and electron spin resonance measurements on n-type films reveal both exponential bandtails and dee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48219b9e3d7a889b94b2401c9d5fed82
https://doi.org/10.1080/13642819108205949
https://doi.org/10.1080/13642819108205949
Publikováno v:
IEEE Microwave and Guided Wave Letters. 8:167-169
This work describes a methodology to extract parasitic capacitances and evaluate losses in multifinger thermally shunted heterojunction bipolar transistors (HBTs) using three dimensional (3-D) electromagnetic modeling. This method is based on the par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::118950d418ed18504b04348586cf82b8
https://doi.org/10.1109/75.663522
https://doi.org/10.1109/75.663522
Autor:
P. Bourne, E. Chartier, M.A. diForte-Poisson, D. Floriot, E. Watrin, S. Cassette, S. L. Delage, H. Blanck
Publikováno v:
Proceedings of EDMO '96.
The goal of this paper is to give an overview of the performances of InGaP HBTs for X-band power applications. A reminder of the peculiarities concerning this device, compared to the more conventional GaAlAs/GaAs HBT, is given as an introduction. A p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34da8132da6406f5c498bb1e41980143
https://doi.org/10.1109/edmo.1996.575812
https://doi.org/10.1109/edmo.1996.575812
Publikováno v:
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474).
This paper describes a new method for the mapping of local temperatures in the active region of high power III-V semiconductor transistors for microwave applications. The measurement technique involves scanning a focused laser beam at the surface of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::779b2638f8e1e2ebb79c10e4bd310945
https://doi.org/10.1109/iccdcs.2000.869853
https://doi.org/10.1109/iccdcs.2000.869853