Zobrazeno 1 - 10
of 67
pro vyhledávání: '"S Kyono"'
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 5:352-359
Graded-Channel MOS (GCMOS) VLSI technology has been developed to meet the growing demand for low power and high performance applications. In this paper, it will be shown that, compared to conventional complementary metal-oxide-semiconductor (CMOS), t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe011a4ceca234fb223ba981b93bbb7b
https://doi.org/10.1109/92.645061
https://doi.org/10.1109/92.645061
Autor:
J. Mittereder, Steven C. Binari, K. Ikossi‐Anastasiou, C. S. Kyono, G. Kelner, G. L. Griffin, J.B. Boos
Publikováno v:
Journal of The Electrochemical Society. 142:3558-3564
We report the incorporation of lactic acid etch mixtures in selective and nonselective etches suitable for InP-based III-V compound semiconductor heterostructure devices. Elimination and reduction of surface structures and controllable sidewall profi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0538d358649da3ddc803ea737f5b6b50
https://doi.org/10.1149/1.2050022
https://doi.org/10.1149/1.2050022
Publikováno v:
Optics Communications. 114:375-380
Using achromatic gratings techniques we have written dynamic holograms on an optically addressed spatial light modulator with a temporally and spatially incoherent white light source. The resolution and depth-of-field of these holograms are theoretic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f73606239d0ca02ae4a596755bca84b
https://doi.org/10.1016/0030-4018(94)00637-a
https://doi.org/10.1016/0030-4018(94)00637-a
Publikováno v:
IEEE Journal of Quantum Electronics. 31:278-285
We present a detailed physical analysis of photocarrier transport in heterojunction bipolar transistors (HBT's) which describes their optical impulse responses on picosecond time scales. Theoretical predictions are experimentally verified with AlInAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e77162ae78a6cd901230fef73665f81
https://doi.org/10.1109/3.348056
https://doi.org/10.1109/3.348056
Autor:
A. Giordana, Mohammad Fatemi, C. S. Kyono, S. Tadayon, Mark E. Twigg, David S. Simons, Bijan Tadayon
Publikováno v:
Journal of Electronic Materials. 22:1437-1440
The effect of annealing on the electrical properties of a GaAs diode structure, which incorporated a nominally undoped low-temperature (LT) layer on top of conventionally grown p-type GaAs, is examined. Unannealed GaAs grown by molecular beam epitaxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2b3cd371aebd3d549f5d24e67d04803
https://doi.org/10.1007/bf02649994
https://doi.org/10.1007/bf02649994
Publikováno v:
LEOS '92 Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53b0d8f601edd6e53d946af15414f5a5
https://doi.org/10.1109/leos.1992.693873
https://doi.org/10.1109/leos.1992.693873
Publikováno v:
Applied Physics Letters. 66:1044-1046
Large improvements are reported in the sensitivity of optically addressed multiple quantum well spatial light modulators. In prior work with these materials the quantum well region has been made semi‐insulating. It is shown that this is unnecessary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b5355f3be8176681e74d3db63734b3e
https://doi.org/10.1063/1.113568
https://doi.org/10.1063/1.113568
Publikováno v:
Applied Physics Letters. 65:956-958
We report improved performance in semi‐insulating GaAs/AlGaAs quantum well based spatial light modulators grown by molecular beam epitaxy. The optically addressed modulator reported here are of a new design and have significantly higher spatial res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b4e6e87e55a63f10339d5af8927fc38
https://doi.org/10.1063/1.112160
https://doi.org/10.1063/1.112160
Autor:
K. Ikossi‐Anastasiou, C. S. Kyono, Steven R. Bowman, D. S. Katzer, W. S. Rabinovich, A. J. Tsao
Publikováno v:
Applied Physics Letters. 64:2244-2246
This letter deals with resonant photorefractive devices fabricated from multiquantum wells of GaAs/Al0.3Ga0.7As and operated in a quantum‐confined Stark effect geometry. Details of the processing are presented. Epitaxial lift‐off was used to remo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3889b94d0bb032e11aaf68f82c84f773
https://doi.org/10.1063/1.111658
https://doi.org/10.1063/1.111658
Publikováno v:
Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
In this paper, we present a study of the electrical and physical properties of uncapped AlSb, grown by molecular beam epitaxy. Large concentrations of oxygen have been observed in the uncapped undoped AlSb layers, resulting in extremely large sheet h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::630ccb3b19f6ae7315d81b7451831f5b
https://doi.org/10.1109/cornel.1993.303088
https://doi.org/10.1109/cornel.1993.303088