Zobrazeno 1 - 4
of 4
pro vyhledávání: '"S K Evtimova"'
Publikováno v:
Journal of Physics C: Solid State Physics. 12:L765-L769
The electron mobility in heavily doped GaAs is calculated by using an approach by Yussouf and Zittartz (1973) to account for the electron scattering in a Gaussian random potential. The cases of random and correlated impurity distribution are consider
Autor:
S K Evtimova, I Y Yanchev
Publikováno v:
Journal of Physics C: Solid State Physics. 18:L377-L381
The electron mobility at 77K of heavily doped and compensated gallium arsenide is calculate assuming the predominant scattering comes from a smooth random potential due to a large number of charged impurities with correlated impurity distribution. Th
Publikováno v:
Journal of Physics C: Solid State Physics. 17:331-339
The near-band-edge photoluminescence at 80K of heavily tellurium-doped degenerate liquid-phase-epitaxial gallium arsenide layers (n=2*1018 cm-3) is investigated. The layers are compensated with shallow germanium acceptors (the values of the degree of
Autor:
S K Evtimova, V P Dobrego
Publikováno v:
Semiconductor Science and Technology. 1:161-166
The dependence of conductivity on electric field and on temperature in heavily doped and strongly compensated liquid-phase epitaxial GaAs layers is investigated. From the dependences on temperature (in low electric fields) and electric field (in stro