Zobrazeno 1 - 4
of 4
pro vyhledávání: '"S J Hawksworth"'
Autor:
G.M. Summers, Stephen Hill, J.M. Chamberlain, J.A.A.J. Perenboom, S J Hawksworth, John Singleton, Robin J. Nicholas, U Ekenberg, Tjbm Janssen, G A Davies, E. C. Valadares, Mohamed Henini
Publikováno v:
Semiconductor Science and Technology, 8, 7, pp. 1465-1469
Semiconductor Science and Technology, 8, 1465-1469
Semiconductor Science and Technology, 8, 1465-1469
Cyclotron resonance of high-mobility (up to 300000 cm2 V-1 s-1 at 100 mK) GaAs/AlGaAs two-dimensional hole gases (2DHGs) grown on (311)A oriented substrates has been measured in magnetic fields up to 17 T and at temperatures down to 350 mK. The 2D ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e07f1259347d02961b4cb9d78faad0ce
https://doi.org/10.1088/0268-1242/8/7/043
https://doi.org/10.1088/0268-1242/8/7/043
Autor:
R.T. Grimes, C J G M Langerak, S J Hawksworth, John Singleton, C.R. Stanley, E P Pearl, J.M. Chamberlain, M.B. Stanaway, Janette L. Dunn, C A Bates, S P Najda
Publikováno v:
Semiconductor Science and Technology. 7:1499-1503
Recently optically detected cyclotron resonance spectra reported by Ahmed et al. in ultra-pure n-GaAs have revealed low-energy structure associated with the cyclotron resonance. The authors have investigated the far-infrared photoconductive response
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14ffa3f07593e1fa6f30b6d08cb02d7d
https://doi.org/10.1088/0268-1242/7/12/013
https://doi.org/10.1088/0268-1242/7/12/013
Autor:
Mohamed Henini, S J Hawksworth, J.M. Chamberlain, A J Page, M. Heath, M. Davies, Tin S. Cheng
Publikováno v:
Semiconductor Science and Technology. 7:1085-1090
The authors report an investigation of contact resistance to high-mobility 2DEG structures ( approximately 1*106 cm2 V-1 s-1) as a function of temperature (30-300 K) and magnetic field (0-0.6 T). The transmission line model (TLM) and the two-layer TL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76b6b9d2da476ca09c27f6e88ad37c6d
https://doi.org/10.1088/0268-1242/7/8/010
https://doi.org/10.1088/0268-1242/7/8/010
Autor:
S J Hawksworth, G. Hill, Mohamed Henini, J.M. Chamberlain, Jan C. Maan, R. E. M. de Bekker, Valmir Antonio Chitta
We have studied experimentally and theoretically the influence of far infrared (FIR) radiation on the tunnel current of double barrier resonant tunneling structures. For coherent tunneling a theoretical FIR response (Δ J F ) which depends on the rad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41aa9b0fe571ead4effba935c75cf8c7
https://doi.org/10.1016/0039-6028(92)90341-3
https://doi.org/10.1016/0039-6028(92)90341-3
