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pro vyhledávání: '"S J Barnett"'
Autor:
S. J. Barnett
This electronic version has been made available under a Creative Commons (BY-NC-ND) open access license. This book offers a critical survey of religious change and its causes in eighteenth-century Europe, and constitutes a challenge to the accepted v
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b4bd72ebc1b699f1babf10a7736489
https://doi.org/10.1201/9781003069621-97
https://doi.org/10.1201/9781003069621-97
Autor:
S. J. Barnett, Kevin James Moon, G.F. Clark, C. R. Whitehouse, C. M. Castelli, Nigel M. Allinson, Alan A. Wells
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 391:481-484
An X-ray sensitive CCD camera has been evaluated at the Daresbury Synchrotron Radiation Source (SRS) for use in X-ray topographic (XRT) studies of epitaxially grown, strain-layered semiconductors (InGaAs/GaAs). Current topographic images obtained wit
Autor:
A.D. Johnson, A. G. Cullis, A.M. Keir, Brian K. Tanner, W. Spirkl, B. Lunn, S. J. Barnett, G.F. Clark, T. Martin, W.E. Hagston, P. Ashu, C. R. Whitehouse, J.H. Jefferson, G. Lacey, J C H Hogg, G. W. Smith, Brian F. Usher
Publikováno v:
Journal of Crystal Growth. 150:85-91
The important value of the X-ray topography (XRT) technique for the investigation of III–V strained-layer relaxation processes is described. In addition to post-growth ex-situ XRT studies, a unique combined XRT/MBE growth facility has been construc