Zobrazeno 1 - 10
of 85
pro vyhledávání: '"S I Troshkov"'
Autor:
M. A. Bobrov, S. A. Blokhin, N. A. Maleev, A. G. Kuz’menkov, A. A. Blokhin, A. P. Vasil’ev, Yu. A. Guseva, M. V. Rakhlin, A. I. Galimov, Yu. M. Serov, S. I. Troshkov, V. M. Ustinov, A. A. Toropov
Publikováno v:
JETP Letters. 116:613-618
The optical characteristics of vertical cylindrical micropillars with AlGaAs distributed Bragg reflectors and InAs/GaAs quantum dots, which are designed for the fabrication of single-photon sources, have been studied. The effect of parameters such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c5e179fbed753d733aa78d1b709e918
https://doi.org/10.1134/s0021364022800207
https://doi.org/10.1134/s0021364022800207
Publikováno v:
Technical Physics. 65:957-960
We have demonstrated that SiC mesastructures with gently sloping sidewalls form with the help of selective reactive ion etching (RIE) of silicon carbide through a photoresist mask (slanted walls are formed during simultaneous etching of SiC and the r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24e5f66a57e80dfbc0a45a0817f40310
https://doi.org/10.1134/s1063784220060195
https://doi.org/10.1134/s1063784220060195
Autor:
D. V. Lebedev, A. M. Mintairov, A. S. Vlasov, M. M. Kulagina, Yu. A. Guseva, S. I. Troshkov, G. Juska, E. Pelucchi, A. Gocalinska
Publikováno v:
Journal of Applied Physics. 132:173106
We describe the growth, material characterization, and lasing of InP/GaInP quantum dot (QD) microdisks (diameter D = 2.2 [Formula: see text]m, quality factor [Formula: see text]) with an emission lasing line of 693 nm (77 K). We demonstrate that MOVP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a40b964c1a6d8357e66c7bc3bbe8427d
https://doi.org/10.1063/5.0105583
https://doi.org/10.1063/5.0105583
Autor:
N. A. Maleev, A. G. Kuzmenkov, M. M. Kulagina, Yu. A. Guseva, A. P. Vasil’ev, S. A. Blokhin, M. A. Bobrov, S. I. Troshkov, V. V. Andryushkin, E. S. Kolodeznyi, V. E. Bougrov, V. M. Ustinov
Publikováno v:
Journal of Optical Technology. 89:677
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c720d4d8245855a58cc80b28c8da7957
https://doi.org/10.1364/jot.89.000677
https://doi.org/10.1364/jot.89.000677
Autor:
M. M. Kulagina, E. V. Petryakova, A. P. Vasil’ev, M. A. Bobrov, V. A. Belyakov, Nikolai A. Maleev, S. N. Maleev, I. V. Makartsev, Yu. P. Kudryashova, F. A. Ahmedov, S. I. Troshkov, V. M. Ustinov, S. A. Blokhin, A. G. Fefelov, E. L. Fefelova, A. V. Egorov, A. G. Kuzmenkov
Publikováno v:
Technical Physics Letters. 45:1092-1096
A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4539ffa476858a0901881f61d5c920c0
https://doi.org/10.1134/s1063785019110075
https://doi.org/10.1134/s1063785019110075
Autor:
S I Troshkov, M. V. Rakhlin, M. M. Kulagina, K. G. Belyaev, Ya. V. Terent’ev, Stefan Ivanov, Yu. A. Guseva, Irina V. Sedova, G. V. Klimko, A. A. Toropov, Yu. M. Zadiranov
Publikováno v:
JETP Letters. 109:145-149
The statistics of photon correlations in the emission of single InAs/AlGaAs quantum dots grown by molecular beam epitaxy and fitted with AlGaAs waveguide nanoantennas for efficient extraction of radiation is investigated. A single-photon source for t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b4f6801ea6823c1583197d9dbbdafe6
https://doi.org/10.1134/s0021364019030135
https://doi.org/10.1134/s0021364019030135
Autor:
Alexander Mintairov, V. I. Smirnov, Alexander N. Smirnov, Yu. A. Guseva, M. M. Kulagina, S. I. Troshkov, Valery Yu. Davydov, Emanuele Pelucchi, A. S. Vlasov, I. Breev, Gediminas Juska, Agnieszka Gocalinska, D. V. Lebedev
GaInP microdisks contained InP/GaInP quantum dots having lateral size ∼150 nm and 1-5 μm−2 were investigated with help of microphotoluminescence technique. Experiments carried out in confocal, time-resolved and low-temperature modes. Comparison
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d531b9530ba41796bbd030c1edd402e
https://hdl.handle.net/10468/11323
https://hdl.handle.net/10468/11323
Autor:
Stefan Ivanov, V. N. Jmerik, S I Troshkov, Pavel N. Brunkov, A. V. Nashchekin, Dmitrii V. Nechaev, A. N. Semenov
Publikováno v:
Semiconductors. 52:1770-1774
The growth features of GaN nanorods on patterned c-sapphire substrates with a regular microcone array having a different density and base diameter in the ranges of (1–5) × 107 cm–2 and 2.5–3.5 μm, respectively, are investigated. The kinetics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0fe6697af63f45420d89e662ec85238
https://doi.org/10.1134/s1063782618130158
https://doi.org/10.1134/s1063782618130158
Autor:
Demid A. Kirilenko, T. V. Shubina, Stefan Ivanov, Nadezda Kuznetsova, Alexander N. Smirnov, V. Yu. Davydov, Dmitrii V. Nechaev, V. N. Jmerik, S I Troshkov
Publikováno v:
Journal of Crystal Growth. 477:207-211
The site-controlled selective area growth of N-polar GaN nanorods (NR) was developed by plasma-assisted MBE (PA MBE) on micro-cone-patterned sapphire substrates (µ-CPSS) by using a two-stage growth process. A GaN nucleation layer grown by migration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03491bfd9ec7cf3880cae9a7f82f8e51
https://doi.org/10.1016/j.jcrysgro.2017.05.014
https://doi.org/10.1016/j.jcrysgro.2017.05.014
Autor:
Sergey A. Blokhin, A. V. Babichev, Innokenty I. Novikov, M. A. Bobrov, A. Yu. Egorov, L. Ya. Karachinsky, N. V. Kryzhanovskaya, S. I. Troshkov, Yu. M. Zadiranov, A. G. Gladyshev, Eduard Moiseev
Publikováno v:
Semiconductors. 51:1127-1132
The possibility of fabricating hybrid metamorphic heterostructures for vertical-cavity surfaceemitting lasers working in the 1300-nm spectral range is demonstrated. The metamorphic semiconductor part of the heterostructure with a GaAs/AlGaAs distribu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eaa584e52c11ded019982e03ead643f
https://doi.org/10.1134/s1063782617090056
https://doi.org/10.1134/s1063782617090056