Zobrazeno 1 - 10
of 11
pro vyhledávání: '"S I Nesterov"'
Structural heterogeneities and electronic effects in self-organized core-shell type structures of Sb
Autor:
L. A. Bityutskaya, T. V. Kulikova, Alexey A. Averin, B. L. Agapov, A. V. Tuchin, S. I. Nesterov, E. V. Lisov
Publikováno v:
Letters on Materials. 7:350-354
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f1aa27c196ec5dedffcf66c0b6e2f55
https://doi.org/10.22226/2410-3535-2017-4-350-354
https://doi.org/10.22226/2410-3535-2017-4-350-354
Publikováno v:
Physics of the Solid State. 55:2150-2153
The domain structure of GaN/SiC hexagonal semiconductor films has been studied using small-angle X-ray scattering in order to determine possible domain configurations in a GaN/SiC film that can influence the properties of the laser on its basis. Data
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f17ea0d040efc32f2ad529bc19c3c83
https://doi.org/10.1134/s1063783413100053
https://doi.org/10.1134/s1063783413100053
Autor:
S. I. Nesterov, E. M. Arakcheeva, E. M. Tanklevskaya, J. Seekamp, M. V. Maksimov, C. M. Sotomayor Torres, S. A. Gurevich
Publikováno v:
Technical Physics. 50:1043-1047
The technology of fabricating photonic crystals with the use of nanoimprint lithography is described. One-and two-dimensional photonic crystals are produced by direct extrusion of polymethyl methacrylate by Si moulds obtained via interference lithogr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b400ec8670b3ca69da6d8ab204e90acd
https://doi.org/10.1134/1.2014536
https://doi.org/10.1134/1.2014536
Publikováno v:
International Journal of Nanoscience. :59-64
The possibility of periodical mask fabrication with elements of minimal size by means of interference photolithography is considered. The method is based on application of striped interference picture of coherent light for photoresist exposition. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c450dacc016146a853cc00337de4dee4
https://doi.org/10.1142/s0219581x0400181x
https://doi.org/10.1142/s0219581x0400181x
Autor:
V. I. Skopina, Fritz Henneberger, N V Lomasov, M. Rabe, E M Tanklevskaya, Joachim Puls, S I Nesterov, V V Travnikov, V. H. Kaibyshev
Publikováno v:
Nanotechnology. 12:602-606
The fine structure and intensity of resonant exciton-phonon (REP) spectra in a Zn0.87Cd0.13Se/ZnSe single quantum well (QW) have been investigated in detail at tunable laser excitation in the energy region of ground ZnCdSe exciton state at 8?K. Obser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77367b7f26590ef07fd08cd438539f72
https://doi.org/10.1088/0957-4484/12/4/346
https://doi.org/10.1088/0957-4484/12/4/346
Autor:
M. M. Kulagina, A. A. Efimov, S. I. Nesterov, M. É. Gaevskii, A. V. Lunev, V. T. Barchenko, I. P. Soshnikov, L. G. Rotkina, O. M. Gorbenko, I. P. Kalmykova
Publikováno v:
Technical Physics. 46:892-896
Self-organizing structures on the InP surface that are formed by ion-beam sputtering in the energy range 0.1–15 keV are investigated. It is shown that the processing of the InP surface by monochromatic argon beams can give rise to the formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::679d5ccc53a441669bb95b0bb1e23c57
https://doi.org/10.1134/1.1387553
https://doi.org/10.1134/1.1387553
Autor:
V. I. Skopina, S. I. Nesterov, S. O. Kognovitskii, Fritz Henneberger, V. V. Travnikov, N. V. Lomasov, M. Rabe, S. A. Gurevich
Publikováno v:
Physics of the Solid State. 40:1413-1416
Linearly polarized luminescence spectra of bare (unburied) semiconductor structures with ZnCdSe/ZnSe quantum wires, obtained by reactive ion etching, were investigated. It was found that, regardless of the orientation of the linear polarization of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cad3b8b161a4fe07bf9c9019c8422fd
https://doi.org/10.1134/1.1130572
https://doi.org/10.1134/1.1130572
Publikováno v:
International Conference on Lasers, Applications, and Technologies 2007: Laser-assisted Micro- and Nanotechnologies.
The idea of antireflective grating transmitting incident light into diffracted orders is presented. Possible design of such a grating for devices operating at 1.06 mkm was developed using effective medium theory (EMT). The diffraction efficiency was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d58bbfd92eb57cbd9f62c1bb61b805d3
https://doi.org/10.1117/12.752211
https://doi.org/10.1117/12.752211
Autor:
V. I. Skopina, S A Gurevich, Y. Qiu, V V Travnikov, H. Temkin, A. Osinsky, M Rabe, S. I. Nesterov, Fritz Henneberger, N V Lomasov, E M Tanklevskaya, Olga Lavrova
Publikováno v:
Semiconductor Science and Technology. 13:139-141
ZnCdSe/ZnSe quantum well wires (QWWs) of various lateral size down to 30 nm were fabricated using a combination of reactive ion etching (RIE) and subsequent new type of wet chemical treatment, followed by epitaxial overgrowth. The processing does not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::773a2fb552a491d71eb65587ae6bdf6b
https://doi.org/10.1088/0268-1242/13/1/022
https://doi.org/10.1088/0268-1242/13/1/022
Autor:
Olga Lavrova, Y. Qiu, V. I. Skopina, J. Mahan, E. M. Tanklevskaia, V. Tretyakov, H. Temkin, A. Osinsky, S. I. Nesterov, S A Gurevich
Publikováno v:
Applied Physics Letters. 71:509-511
A simple wet chemical etch which produces stable and oxide-free surfaces of ZnSe is described. The etchant, a low pH solution of H2SO4:H2O2:H2O, reacts with ZnSe producing an amorphous layer of Se which grows into the semiconductor. The Se layer is t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efc6fcde85b80f4852c24b679e7b5793
https://doi.org/10.1063/1.119593
https://doi.org/10.1063/1.119593