Zobrazeno 1 - 10
of 12
pro vyhledávání: '"S I, KIRILLOVA"'
Autor:
Larysa Khomenkova, T. Stara, J. Jedrzejewski, Yu. Emirov, N. Korsunska, Tetyana Kryshtab, M. Baran, S. I. Kirillova, A. V. Sachenko, G. Gómez Gasga, E. Savir, Y. Goldstein, Ye. Venger
Publikováno v:
Materials Science and Engineering: B. 174:97-101
Si-rich-SiO2 layers with excess silicon of 45–50% were grown by RF magnetron co-sputtering from pure SiO2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5431aa8ae343cd6d58c8f80b2330c26e
https://doi.org/10.1016/j.mseb.2010.04.027
https://doi.org/10.1016/j.mseb.2010.04.027
Autor:
A. V. Sachenko, Y. Goldstein, N. E. Korsunska, J. Jedrzejewski, T. R. Stara, S. I. Kirillova, E. F. Venger, E. Savir, L. Yu. Khomenkova
Publikováno v:
Semiconductors. 44:1187-1191
Layers grown by magnetron deposition of Si and SiO2 on a p-type silicon substrate and containing silicon nanocrystals in the oxide matrix have been studied by the method of temperature dependences of the capacitive photovoltage. The effect of the sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::607f19a958f096bfaaf891c9ab57e441
https://doi.org/10.1134/s1063782610090150
https://doi.org/10.1134/s1063782610090150
Autor:
V. E. Primachenko, S. I. Kirillova, E. B. Kaganovich, E. G. Manoilov, Ja. F. Kononets, E. F. Venger, Yu. A. Tsyrkunov, B. M. Bulakh, I. M. Kizyak
Publikováno v:
Semiconductors. 39:565-571
The temperature dependences of photovoltage induced by intense pulses of red and white light, along with the time-resolved spectral dependences of photoluminescence, are studied for porous silicon structures por-Si/p-Si). These structures have been o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e012fb73da21adf5eda12900807fb84f
https://doi.org/10.1134/1.1923566
https://doi.org/10.1134/1.1923566
Publikováno v:
Semiconductors. 38:113-119
The effect of doping with gold on the photoluminescence properties and electronic states of structures consisting of porous Si and single-crystal Si, formed by chemical stain etching, was studied. The time-resolved photoluminescence spectra and the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e13a1eaba3085f5ef9d5ec6bb70c1a3
https://doi.org/10.1134/1.1641142
https://doi.org/10.1134/1.1641142
Autor:
S. I. Kirillova, V. E. Primachenko, S. V. Svechnikov, I. M. Kizyak, E. F. Venger, É. B. Kaganovich, É. G. Manoilov
Publikováno v:
Semiconductors. 36:1027-1032
Doping nanocrystalline silicon (nc-Si) films grown by laser ablation with gold leads to a considerable suppression of the nonradiative recombination of the charge carriers and excitons, an increase in the intensity and stability of the visible photol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8444a5b168e120819d6e87b12c30a811
https://doi.org/10.1134/1.1507286
https://doi.org/10.1134/1.1507286
Publikováno v:
Russian Microelectronics. 29:345-348
Electron states at thep-Si(100)/SiO2 interface were studied by the method of temperature dependence of surface photo-emf. Taking into account our earlier results on the n-Si(100)/SiO2 interface, we found that, in the absence of an external electric f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d0208a178598a8570b235654e3d8593
https://doi.org/10.1007/bf02773286
https://doi.org/10.1007/bf02773286
Autor:
É. G. Manoilov, S. I. Kirillova, V. E. Primachenko, S. V. Svechnikov, E. F. Venger, É. B. Kaganovich
Publikováno v:
Semiconductors. 33:1202-1205
Structures based on porous silicon por-Si/p-Si, both freshly prepared by chemical etching and aged, exhibit a temperature-dependent photovoltage at high levels of electron-hole pair generation by pulse trains of red and white light. These structures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::238eeb5ed019ac0d3cb516b6f7f9322c
https://doi.org/10.1134/1.1187849
https://doi.org/10.1134/1.1187849
Publikováno v:
Semiconductors. 33:1088-1092
Processing in HCl is found to stabilize the system of surface electronic states of the (100) surface of n-GaAs in the temperature range 100–300 K. Distributions for the effective density of surface electronic states in the band gap of GaAs, which a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2c298e1c88b3cc28f8cce589ced6e2e
https://doi.org/10.1134/1.1187871
https://doi.org/10.1134/1.1187871
Autor:
E. F. Venger, E. G. Manoilov, S. V. Svechnikov, S. I. Kirillova, E. B. Kaganovich, V. E. Primachenko
Publikováno v:
Physics, Chemistry and Application of Nanostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff6eea627b52d1f8e063870c1f3ca05b
https://doi.org/10.1142/9789812817990_0008
https://doi.org/10.1142/9789812817990_0008
Publikováno v:
physica status solidi (a). 88:647-654
The nonequilibrium depletion relaxation processes at real, clean, thermally oxidized, and Au and Zn doped n- and p-type Si surfaces are studied. A strong acceleration of the relaxation process with field increase is observed. This is explained by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80f7c3b06be22102c387bc4780fba271
https://doi.org/10.1002/pssa.2210880231
https://doi.org/10.1002/pssa.2210880231