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pro vyhledávání: '"S I, DIDENKO"'
Alphaea stanislava, a new species from vietnam and laos (lepidoptera: erebidae: arctiinae: arctiini)
A new species of the genus Alphaea, Alphaea stanislava sp. n. is described from central Vietnam and north-eastern Laos. The new species belongs to the subgenus Nayaca Moore, 1879 and is similar to A. chiyo Dubatolov & Kishida, 2005 and A. imbuta (Wal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8a7d50fd321abf0f496332d2a59329c
https://doi.org/10.37828/em.2021.44.4
https://doi.org/10.37828/em.2021.44.4
Autor:
N. V. Kornilov, G. I. Britvich, M. Yu. Kostin, Nikolay V. Luparev, S. A. Tarelkin, D. V. Teteruk, A. V. Chernykh, Vladimir Blank, S. I. Didenko, S.A. Terentiev, S. Yu. Troschiev, A. P. Chubenko, S. V. Chernykh, N. I. Polushin
Publikováno v:
Nanotechnologies in Russia. 14:476-480
The results of studies on fast-neutron detectors application of homoepitaxial Me–p––p+ structures are reported. Epitaxial boron doped (NA = (4–8) × 1014 cm–3) layers 65 μm thick were grown on highly boron doped HPHT diamond plates by CVD.
Autor:
Yu.N. Glybin, N. V. Kornilov, S. A. Tarelkin, S. I. Didenko, D. V. Teteruk, Nikolay V. Luparev, A. V. Antipov, S. V. Chernykh, A. V. Chernykh, S.A. Terentiev, N. I. Polushin, A. P. Chubenko, S. Yu. Troschiev, Vladimir Blank
Publikováno v:
Instruments and Experimental Techniques. 62:473-479
The results of testing a prototype of a surface-barrier detector of charged particles based on single-crystal epitaxial layers of diamond are presented. Diamond films with p-type conduction with a boron concentration of (4–8) × 1014 cm–3 65 μm
Autor:
S. V. Chernykh, F. S. Senatov, N. Burtebayev, R. Khodzhaev, J. Mussayev, A. P. Chubenko, G. I. Britvich, D. M. Zazulin, S. I. Didenko, V. V. Tcherdyntsev, A. V. Chernykh
Publikováno v:
Instruments and Experimental Techniques. 62:312-316
Surface-barrier structures based on high-purity epitaxial GaAs layers with an ultrahigh-molecular-weight polyethylene converter were tested as fast-neutron detectors. The α-particle spectra and the response to fast neutrons were measured under expos
Autor:
Antonio Agresti, S. I. Didenko, Sara Pescetelli, Ali Sehpar Shikoh, A. Di Carlo, Alexander Y. Polyakov, Danila Saranin, Ivan Shchemerov, Denis Kuznetsov, N. B. Smirnov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62f4a8e0e00968456860f8486c1a1d52
http://hdl.handle.net/2108/279983
http://hdl.handle.net/2108/279983
Autor:
N. Burtebaev, G. I. Britvich, S. V. Chernykh, Marzhan Nasurlla, Maulen Nasurlla, A. P. Chubenko, S. I. Didenko, E. V. Sleptsov, F.M. Baryshnikov, A. V. Chernykh
Publikováno v:
Technical Physics Letters. 44:942-945
GaAs Schottky barrier detectors for α particle spectrometry have been tested. Detectors had an input window area of 80 mm2 and a working barrier layer thickness of 40–50 μm. The energy resolution (FWHM) measured on 5.499 MeV α line of 238Pu sour
Autor:
A A Krasnov, S. I. Didenko, O. I. Rabinovich, I.V. Fedorchenko, D.S. Gaev, Sergey F. Marenkin, Sergey Legotin, Marina Orlova, A.R. Kushkov
Publikováno v:
Journal of Crystal Growth. 483:245-250
The results of nanoscale islet films grown by AIIIBV and AIVBVI incongruent evaporation compounds are discussed. The surface morphology structure was studied by atomic-force microscopy. It is shown that the distribution density and the characteristic
Autor:
Lev Luchnikov, Denis Kuznetsov, Pavel A. Gostishev, Aldo Di Carlo, Dmitry A. Podgorny, Danila Saranin, S. I. Didenko, Vsevolod N. Mazov, Dmitry S. Muratov, Denis M. Migunov, Alexey R. Tameev, Dmitry A. Lypenko, Marina Orlova
Publikováno v:
Journal of Materials Chemistry C. 6:6179-6186
Owing hysteresis free characteristics and good reproducibility, inverted p-i-n perovskite solar cells (PSC) are gaining large interest in the photovoltaic field. In this context, the need for stable materials calls for the development of robust trans
Autor:
Denis Kuznetsov, Kilwon Cho, Hikmet Najafov, Hyun Ho Choi, Nikolai Kharlamov, Alejandro L. Briseno, Vitaly Podzorov, S. I. Didenko
Publikováno v:
ACS Applied Materials & Interfaces. 9:34153-34161
Photoinduced charge transfer between semiconductors and gate dielectrics can occur in organic field-effect transistors (OFETs) operating under illumination, leading to a pronounced bias-stress effect in devices that are normally stable while operatin
Publikováno v:
Journal of Crystal Growth. 468:567-571
In current paper nanoheterostructure optimization for LED and phototransistor usage is discussed. Special doping into quantum wells and barriers by Indium atoms was investigated. By simulation improved quantum sized active region was detected which i