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pro vyhledávání: '"S Galata"'
Akademický článek
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Publikováno v:
Russian Journal of Applied Chemistry. 92:1064-1068
Kinetics of the alkaline extraction of mercaptans from light hydrocarbon fractions on model compositions with the use of a cation-active surfactant, didecyldimethylammonium chloride, was studied. To analyze the influence exerted by the main factors o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c51a10bc703b28cb823f044194f4f46a
https://doi.org/10.1134/s1070427219080020
https://doi.org/10.1134/s1070427219080020
Publikováno v:
Journal of Physics: Conference Series. 2361:012024
In this article, a crankshaft design has been made for a compression ignition internal combustion engine that is planned to be used in an aerial vehicle. Alternative models were designed as hollow pins with different diameters. Finite element analysi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f66d5663b264f3ce96192fb652265f1
https://doi.org/10.1088/1742-6596/2361/1/012024
https://doi.org/10.1088/1742-6596/2361/1/012024
Akademický článek
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Autor:
E. Golias, S. Galata, G. Mavrou, A. Sotiropoulos, Y. Panayiotatos, A. Dimoulas, Dimitra Tsoutsou
Publikováno v:
Microelectronic Engineering. 88:407-410
The molecular and atomic oxidation of molecular beam deposited Se passivating layers on Ge substrates was in situ investigated by X-ray photoelectron spectroscopy. It turns out that while Se is efficient in suppressing Ge oxidation upon molecular oxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::911ca1b1add27979c65b4630bff14736
https://doi.org/10.1016/j.mee.2010.11.038
https://doi.org/10.1016/j.mee.2010.11.038
Autor:
Th. Speliotis, A. Dimoulas, E. Golias, Salvatore Gennaro, S. Galata, Mario Barozzi, Damiano Giubertoni, V. Ioannou-Sougleridis
Publikováno v:
Microelectronic Engineering. 88:254-261
In this work we demonstrate the fabrication and characterization of high performance junction diodes using annealing temperatures within the temperature range of 300-350?C. The low temperature dopant activation was assisted by a 50nm platinum layer w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67c67764fd45d017e7d140e3eb6178cf
https://doi.org/10.1016/j.mee.2010.11.001
https://doi.org/10.1016/j.mee.2010.11.001
Publikováno v:
ECS Transactions. 33:433-446
Germanium is considered to be an alternative channel material for advanced CMOS devices. Due to its small bandgap and high mobility, it can allow operation of devices at low supply voltage without loss of performance. The main obstacle for implementa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37589604e5dc12a573a723b5ffb25dc1
https://doi.org/10.1149/1.3487574
https://doi.org/10.1149/1.3487574
Publikováno v:
Solid-State Electronics. 54:979-984
The effect of constant voltage stress (CVS) on Pt/La(2)O(3)/n-Ge MOS devices biased at accumulation is investigated and reported. It is found that the stress induced leakage current (SILC) initially increases due to electron charge trapping on pre-ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4886cd329d6a3a5a457239d7bf407d7b
https://doi.org/10.1016/j.sse.2010.04.023
https://doi.org/10.1016/j.sse.2010.04.023
Autor:
A. Sotiropoulos, Y. Panayiotatos, Marilyne Sousa, G. Mavrou, Polychronis Tsipas, Caroline Andersson, Jean Fompeyrine, Athanasios Dimoulas, C. Rossel, Chiara Marchiori, M. Richter, David J. Webb, S. Galata
Publikováno v:
ECS Transactions. 16:295-306
In this paper we investigate the impact of charged surface defects on the electronic properties of Ge surface. In addition, we describe new ways of passivating the Ge surface by using reactive rare earth oxides, which catalyze the formation of stable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bdf6ddf3a69494a92ec257f7cb3512a
https://doi.org/10.1149/1.2981611
https://doi.org/10.1149/1.2981611
Publikováno v:
Materials Science and Engineering: B. :435-439
In this thesis light emission from sulphur related impurity in silicon has been reported. Although, sulphur related luminescence from silicon has been stated since the 1980's, no room temperature luminescence has been achieved and no compatible devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7feb46542bedf1744c6e29c1ff5a5162
https://doi.org/10.1016/j.mseb.2005.08.081
https://doi.org/10.1016/j.mseb.2005.08.081