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Autor:
J.W. Orton, G B Ren, J. Morgan, T. S. Chengt, S E Hoopert, C. T. Foxont, Eric C. Larkins, Ian Harrison, G. M. Laws
Publikováno v:
MRS Proceedings. 482
We report on the fabrication and characterisation gallium nitride light emitting diodes (LEDs) grown by molecular beam epitaxy on (0001) oriented sapphire and (111)B GaAs substrates. The current voltage characteristics of the devices grown on sapphir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89763d0754ba8ee6ba125dd733798fec
https://doi.org/10.1557/proc-482-1113
https://doi.org/10.1557/proc-482-1113
