Zobrazeno 1 - 10
of 141
pro vyhledávání: '"S Descombes"'
Autor:
J Levraut, D Piga, P Gibelin, S Descombes, D Borel, Véronique Paquis-Flucklinger, S Bottini, Charles Bouveyron, F Simoes
Publikováno v:
European Heart Journal. 41
There is a growing body of evidence that air pollution is a significant threat to health worldwide. The time exposure to air pollution leads diverse impact on the health. A short-term exposure increases hospital admission and mortality rate, causing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd0312399b9eec36708046c6c1df0323
https://doi.org/10.1093/ehjci/ehaa946.3493
https://doi.org/10.1093/ehjci/ehaa946.3493
Publikováno v:
Revue Neurologique. 166:901-908
Resume Introduction L’accident vasculaire cerebral (AVC) touche en France environ 120 000 personnes chaque annee. Le benefice de la prise en charge dans une unite neurovasculaire (UNV) a ete demontre dans de nombreuses etudes controlees. L’object
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acebd641cbbf4b08a4c69291d88b47b8
https://doi.org/10.1016/j.neurol.2010.03.009
https://doi.org/10.1016/j.neurol.2010.03.009
Autor:
Alexandre Talbot, A. Toffoli, Simone Pokrant, D. Aime, Markus Muller, Alexandre Mondot, Yves Morand, G. Ribes, Francois Leverd, Thomas Skotnicki, Pascal Gouraud, Julien-Marc Roux, S. Descombes, Benoit Froment
Publikováno v:
Solid-State Electronics. 50:620-625
In this paper, we present an innovative way of fabricating MOS transistors with totally Ni-silicided (Ni-TOSI) gates without any CMP step before the full gate silicidation process. The combination of the use of a hard-mask-capped ultra-low initial Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c6637d44991cb5c46cde16bf070c793
https://doi.org/10.1016/j.sse.2006.03.033
https://doi.org/10.1016/j.sse.2006.03.033
Autor:
Alexandre Talbot, R. Palla, Francois Leverd, Pascale Mazoyer, Yves Morand, Thomas Skotnicki, Didier Dutartre, N. Carriere, Stephane Monfray, N. Buffet, D. Chanemougame, Y. Le Friec, C. Jenny, R. Pantel, S. Borel, Claire Fenouillet-Beranger, S. Descombes, D. Louis
Publikováno v:
Solid-State Electronics. 48:887-895
In this paper we explain the advantages of very thin layers (in the channel and in the BOX) of the silicon-on-nothing (SON) transistors. Electrical results are also presented, with gate length down to 38 nm, with a conduction channel thickness as thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8b4c546ac0bcf5e4b55339fbd8a95a7
https://doi.org/10.1016/j.sse.2003.12.013
https://doi.org/10.1016/j.sse.2003.12.013
Akademický článek
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Autor:
O. Rascol, C. Brefel-Courbon, Claire Thalamas, S. Descombes, J.F. Albucher, Jean-Louis Montastruc, Jean-Michel Senard
Publikováno v:
Headache: The Journal of Head and Face Pain. 41:178-182
Objective.—To assess the effects of amitriptyline and sudden analgesic withdrawal on headache frequency and quality of life in patients suffering from chronic daily headache related to analgesics abuse. Methods.—Seventeen nondepressed patients wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c1be863f504e0e3ea8de85ca9d24f28
https://doi.org/10.1046/j.1526-4610.2001.111006178.x
https://doi.org/10.1046/j.1526-4610.2001.111006178.x
Autor:
Julie H. Carter, C. Soubrouillard, Claire Thalamas, Nelly Fabre, François Viallet, K. Lafnitzegger, John G. Nutt, Olivier Blin, S. Wright, P. Azulay, S. Descombes, Olivier Rascol
Publikováno v:
Annals of Neurology. 45:736-741
Studies in animal models show a selective D1 receptor agonist with full functional efficacy compared with dopamine to have antiparkinsonian efficacy of similar magnitude to levodopa, without the same propensity for inducing dyskinesia. To date, no su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d434ecdb8cb2757911e5b566b44b7d37
https://doi.org/10.1002/1531-8249(199906)45:6<736::aid-ana7>3.0.co
https://doi.org/10.1002/1531-8249(199906)45:6<736::aid-ana7>3.0.co
Autor:
V. Carron, Bernard Previtali, V. Balan, S. Descombes, Maurice Rivoire, O. Cueto, Simon Deleonibus, L. Baud, Yves Morand, O. Faynot, M. Vinet, Thierry Poiroux, F. Nemouchi, L. Tosti
Publikováno v:
2009 International Symposium on VLSI Technology, Systems, and Applications.
We report in this paper the fabrirication and the characterirization of FDSOI pMOSFETs with metallic source and drain exhibiting the best performance obtained so far on metallic source/drain devices, with Ion=345µA/µm and Ioff=30nA/µm at −1V for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31d5b31f8da798a2fac76a321cf8c265
https://doi.org/10.1109/vtsa.2009.5159304
https://doi.org/10.1109/vtsa.2009.5159304
Autor:
Fabrice Nemouchi, Jean-Paul Barnes, Magali Putero, S. Descombes, Brice Arrazat, Dominique Mangelinck, János L. Lábár, Loeizig Ehouarne, Olivier Kermarrec, Yves Morand, V. Carron, Yves Campidelli
Publikováno v:
ECS Transactions
ECS Transactions, 2007, 6 (16), pp.49-59. ⟨10.1149/1.2812896⟩
ECS Transactions, Electrochemical Society, Inc., 2007, 6 (16), pp.49-59. ⟨10.1149/1.2812896⟩
ECS Transactions, 2007, 6 (16), pp.49-59. ⟨10.1149/1.2812896⟩
ECS Transactions, Electrochemical Society, Inc., 2007, 6 (16), pp.49-59. ⟨10.1149/1.2812896⟩
In this paper, we report on the solid state reactions of Ni thin films (6nm to 12nm) deposited on Ge (001). Especially, the influence of the substrate dopants (As and BF2) is investigated. TEM and SIMS analyses point out the presence of an additional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da90827a326709ee92cc8c5a6db13b1d
https://hal.science/hal-01951271
https://hal.science/hal-01951271
Autor:
Thomas Signamarcheix, Laurent Clavelier, Cyrille Le Royer, T. Billon, S. Lagrasta, Carl Quaeyhaegens, D. Bensahel, B. Depuydt, N. Kernevez, Jean-Francois Damlencourt, Yves Morand, Claude Tabone, Olivier Kermarrec, Y. Campidelli, Arnaud Rigny, S. Descombes, Jean-Michel Hartmann, Simon Deleonibus, Nikolay Cherkashin, Antoon Theuwis, Benjamin Vincent, Chrystel Deguet, T. Akastu, P. Rivallin, L. Sanchez
Publikováno v:
Workshop on Germanium for CMOS
Workshop on Germanium for CMOS, Nov 2006, ville indéterminée, Unknown Region. pp.789-805, ⟨10.1149/1.2355874⟩
Workshop on Germanium for CMOS, Nov 2006, ville indéterminée, Unknown Region. pp.789-805, ⟨10.1149/1.2355874⟩
The challenges posed by the scaling of Silicon (Si) devices make mandatory the study of new materials to overcome the physical limitations of the Si. Germanium (Ge) was actually used in the first transistors but was then abandoned in favour of Si due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4581ac3f93125f1c1d7538e5f880620
https://hal.science/hal-01736072
https://hal.science/hal-01736072