Výsledky vyhledávání - "S D Baranovskii"

Quantum states in disordered media. II. Spatial charge carrier distribution

Autor: A. V. Nenashev, S. D. Baranovskii, K. Meerholz, F. Gebhard

Publikováno v: Physical Review B. 107

The space- and temperature-dependent electron distribution $n(\mathbf r,T)$ is essential for the theoretical description of the opto-electronic properties of disordered semiconductors. We present two powerful techniques to access $n(\mathbf r,T)$ wit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62854e6867c5ac89e1aaae9d9b90d573
https://doi.org/10.1103/physrevb.107.064207

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Quantum states in disordered media. I. Low-pass filter approach

Autor: F. Gebhard, A. V. Nenashev, K. Meerholz, S. D. Baranovskii

The current burst in research activities on disordered semiconductors calls for the development of appropriate theoretical tools that reveal the features of electron states in random potentials while avoiding the time-consuming numerical solution of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e75236d115f62d2595e0c693a6aa189f
http://arxiv.org/abs/2212.00633

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Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions

Publikováno v: Nature communications, vol 12, iss 1
Nature Communications
Nature Communications, Vol 12, Iss 1, Pp 1-11 (2021)

Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applications in nanotechnology, yet their charge transport and most of the spectroscopic properties have not been investigated. Here, we synthesize a monolayer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::644fb922fb50f5128085f1b32e6ffae2
https://escholarship.org/uc/item/6np0h10d

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Parametrization of the Gaussian Disorder Model to Account for the High Carrier Mobility in Disordered Organic Transistors

Autor: Sungyeop Jung, Louis Giraudet, S. D. Baranovskii, Andrew Plews, Yvan Bonnassieux, Ahmed Nejim, Gilles Horowitz, Sungjune Jung, Florian Gebhard, Yongjeong Lee, O. Simonetti, Klaus Meerholz

Publikováno v: Physical Review Applied. 15

Correct parameterization of the Gaussian disorder model (GDM) on spatially random sites is necessary for a complete description of charge transport in disordered materials and concomitant device characteristics. Because the GDM on spatially random si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ba5779b9ada2d6692f1774ec2a7e9f16
https://doi.org/10.1103/physrevapplied.15.024021

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Comment on 'Charge transport in disordered semiconducting polymers driven by nuclear tunneling'

Autor: S. D. Baranovskii, Florian Gebhard, A. V. Nenashev

Publikováno v: Physical Review B. 102

In Phys. Rev. B 93, 140206(R) (2016), electron transport governed by nuclear tunneling was claimed to be a more realistic transport mechanism in semiconducting polymers as compared to Marcus and Miller-Abrahams transport mechanisms. The conclusion wa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c29121370afc153304aba8f1040b661f
https://doi.org/10.1103/physrevb.102.066201

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Percolation description of charge transport in amorphous oxide semiconductors

Autor: S. H. M. Greiner, A. V. Nenashev, S. D. Baranovskii, Florian Gebhard, J. O. Oelerich, A. V. Dvurechenskii

Publikováno v: Physical Review B. 100

The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the phenomenon. In this article, a recipe for theoretical description of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6063e623d58c86dde84748f82c8fe6ce
https://doi.org/10.1103/physrevb.100.125202

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