Zobrazeno 1 - 10
of 102
pro vyhledávání: '"S Bansropun"'
Autor:
A. Leuliet, E. Papandreou, Matroni Koutsoureli, Loukas Michalas, A. Ziaei, P. Martins, S. Bansropun, George J. Papaioannou
Publikováno v:
Microelectronics Reliability. 53:1655-1658
The dielectric charging in MEMS capacitive switches is a complex effect. The high electric field during pull-down causes intrinsic free charge migration and dipole orientation as well as charge injection. The macroscopic dipole moment of the first tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fcbcd051ab265935da0ceef7bd32478
https://doi.org/10.1016/j.microrel.2013.07.057
https://doi.org/10.1016/j.microrel.2013.07.057
Autor:
A. Leuliet, Philippe Bergonzo, Samuel Saada, P. Martins, Matroni Koutsoureli, S. Bansropun, Loukas Michalas, A. Ziaei, C Mer–Calfati, George J. Papaioannou
Publikováno v:
Journal of Micromechanics and Microengineering
Journal of Micromechanics and Microengineering, 2014, 24 (11), ⟨10.1088/0960-1317/24/11/115017⟩
Journal of Micromechanics and Microengineering, IOP Publishing, 2014, 24 (11), ⟨10.1088/0960-1317/24/11/115017⟩
Journal of Micromechanics and Microengineering, 2014, 24 (11), ⟨10.1088/0960-1317/24/11/115017⟩
Journal of Micromechanics and Microengineering, IOP Publishing, 2014, 24 (11), ⟨10.1088/0960-1317/24/11/115017⟩
International audience; This paper presents the electrical assessment and modeling of the discharge process in RF MEMS capacitive switches with nanocrystalline diamond dielectric film. The assessment is performed by taking into account the detailed d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa8d121b6d8e313a7d5a79d45b080571
https://cea.hal.science/cea-01841455/document
https://cea.hal.science/cea-01841455/document
Autor:
A. Ziaei, George J. Papaioannou, Anestis Gantis, Loukas Michalas, Matroni Koutsoureli, S. Bansropun
Publikováno v:
2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems.
The paper investigates the dielectric charging in nanostructured materials already used or potential candidate for insulating films in MEMS capacitive switches. The investigation takes into account the percolation transport through grain boundaries i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e99642de5f26bcf0f8a9fa4b11e1c4c
https://doi.org/10.1109/sirf.2014.6828516
https://doi.org/10.1109/sirf.2014.6828516
Publikováno v:
IEEE Transactions on Electron Devices. 48:1333-1339
N-n-p Al/sub 0.3/Ga/sub 0.7/As/GaAs heterojunction phototransistors have been fabricated with a novel thinned emitter-edge shoulder structure. Varying sized MOVPE-grown circular devices have been assessed both electrically and optically to determine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::619341e436aaf082cc4ddbdc5046c5fa
https://doi.org/10.1109/16.930648
https://doi.org/10.1109/16.930648
Autor:
Christine Mer, P. Martins, George J. Papaioannou, Philippe Bergonzo, A. Leuliet, Matroni Koutsoureli, R. Hugon, Samuel Saada, E. Papandreou, Loukas Michalas, A. Ziaei, S. Bansropun
Publikováno v:
IEEE Xplore
2013 IEEE International Reliability Physics Symposium (IRPS)
2013 IEEE International Reliability Physics Symposium (IRPS), Apr 2013, Anaheim, United States. pp.6532049, ⟨10.1109/IRPS.2013.6532049⟩
2013 IEEE International Reliability Physics Symposium (IRPS)
2013 IEEE International Reliability Physics Symposium (IRPS), Apr 2013, Anaheim, United States. pp.6532049, ⟨10.1109/IRPS.2013.6532049⟩
International audience; Diamond films are considered as superior dielectric in comparison to Si3N4 for MEMS applications. The present paper provides a detail characterization study of electrical properties of undoped microcrystalline diamond films in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d15fb5268ec30edc333ce79a66c67c39
https://hal.science/hal-01902644
https://hal.science/hal-01902644
Autor:
George J. Papaioannou, A. Ziaei, Loukas Michalas, S. Xavier, C Lioutas, S. Bansropun, Matroni Koutsoureli
Publikováno v:
Journal of Micromechanics and Microengineering. 27:014001
The electrical properties of gold nanorods nanostructured silicon nitride films are comprehensively investigated with the aid of metal–insulator–metal capacitors and RF MEMS capacitive switches. Different nanorod diameters and densities were grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcb8fc8ccee85a9639b9a7af46b9ce04
https://doi.org/10.1088/0960-1317/27/1/014001
https://doi.org/10.1088/0960-1317/27/1/014001
Autor:
Mathieu Carras, Eric Lallier, Gaëlle Lucas-Leclin, Guillaume Bloom, Xavier Marcadet, Brigitte Loiseaux, Christian Larat, Mane-Si Laure Lee-Bouhours, Patrick Georges, Gaëlle Lehoucq, S. Bansropun
Publikováno v:
SPIE Photonics West '12 / OPTO-Novel in-plane semiconductor lasers XI
SPIE Photonics West '12 / OPTO-Novel in-plane semiconductor lasers XI, Jan 2012, San Francisco, United States. pp.8277-65
Optics Letters
Optics Letters, Optical Society of America-OSA Publishing, 2011, 36 (19), pp.3810-3812
SPIE Photonics West '12 / OPTO-Novel in-plane semiconductor lasers XI, Jan 2012, San Francisco, United States. pp.8277-65
Optics Letters
Optics Letters, Optical Society of America-OSA Publishing, 2011, 36 (19), pp.3810-3812
An external cavity with a binary phase grating has been developed to achieve the coherent beam addition of five quantum-cascade lasers emitting at 4.65 μm. The combining of these five emitters is achieved by a binary phase grating or Dammann grating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1eea6e0d5e8657198e4aef66ec25bd81
https://hal-iogs.archives-ouvertes.fr/hal-00667820/file/PhotonicsWest2012_GBloom_CBC_of_QCL.pdf
https://hal-iogs.archives-ouvertes.fr/hal-00667820/file/PhotonicsWest2012_GBloom_CBC_of_QCL.pdf
Autor:
Steve Arscott, Alistair Rowe, Daniel Paget, Evelyne Gil, Reda Ramdani, S. Bansropun, Bruno Gérard, Duong Vu, Emilien Peytavit, Yamina André
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82 (11), pp.115331-1-12. ⟨10.1103/PhysRevB.82.115331⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 82, pp.115331-1-12. ⟨10.1103/PhysRevB.82.115331⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 82 (11), pp.115331-1-12. ⟨10.1103/PhysRevB.82.115331⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82 (11), pp.115331-1-12. ⟨10.1103/PhysRevB.82.115331⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 82, pp.115331-1-12. ⟨10.1103/PhysRevB.82.115331⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 82 (11), pp.115331-1-12. ⟨10.1103/PhysRevB.82.115331⟩
International audience; The tunnel photocurrent between a gold surface and a free-standing semiconducting thin film excited from the rear by above bandgap light has been measured as a function of applied bias, tunnel distance and excitation light pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::735e98eef9583eb249f49c222326e442
http://arxiv.org/abs/1006.2915
http://arxiv.org/abs/1006.2915
Autor:
Henri Benisty, A. DeRossi, S. Bansropun, Simone Cassette, Anne Talneau, E. Weidner, Sylvain Combrié
Publikováno v:
Optics Express
Optics Express, Optical Society of America-OSA Publishing, 2006, 14 (16), pp.7353-7361. ⟨10.1364/OE.14.007353⟩
Optics Express, Optical Society of America-OSA Publishing, 2006, 14 (16), pp.7353-7361. ⟨10.1364/OE.14.007353⟩
International audience; A single-line-defect low-loss photonic crystal waveguide based on a perforated GaAs membrane in an aluminium-free material system is demonstrated. The GaInP lattice is matched to GaAs as the cladding/sacrificial layer. Fabry-P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91326f22e8b778efb4f200cd29954c93
https://pubmed.ncbi.nlm.nih.gov/19529104
https://pubmed.ncbi.nlm.nih.gov/19529104
Autor:
Z. Ouarch, T. Dean, Tibault Reveyrand, Erwan Morvan, M. A. Di-Forte Poisson, Eric Chartier, Raphaël Aubry, N. Sarazin, D. Thenot, T. Bouvet, Jean-Claude Jacquet, Olivier Jardel, Sylvain Delage, D. Lancereau, Didier Floriot, Y. Gourdel, O. Drisse, Christian Dua, Audrey Martin, J.O. McLean, S. Bansropun, A.J. Hydes, Stéphane Piotrowicz, G. Lecoustre, M. Richard
Publikováno v:
IEEE Compound Semiconductor IC Symposium CSICS 2008
IEEE Compound Semiconductor IC Symposium CSICS 2008, Oct 2008, United States. pp 1-4
IEEE Compound Semiconductor IC Symposium CSICS 2008, Oct 2008, United States. pp 1-4
This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency. A new step was achieved, 58 W of output power with 38% PAE in X-Band were obtained using an 18 mm 2 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a9b5a2d5534a726ccc1698902dba301
https://doi.org/10.1109/csics.2008.39
https://doi.org/10.1109/csics.2008.39