Zobrazeno 1 - 10 of 36 pro vyhledávání: '"S A Rybalka"'
1
Akademický článek
Methods of program analysis of high-resolution electrocardiogram recorded using hardware-software complex based on nanosensors
Autor: M. L. Ivanov, D. K. Avdeeva, М. М. Yuzhakov, S. А. Rybalka, Guo Wenjia, I. V. Maksimov, M. V. Balakhonova
Publikováno v: Омский научный вестник, Vol 4 (172), Pp 74-79 (2020)
The paper aims to consider the software methods used for detection of elements of high-resolution electrocardiographic (ECG) signals recorded using a nanosensor-based hardware and software complex. To achieve the aim, the study employed the follo
Externí odkaz: https://doaj.org/article/9d6831904bc141e4ac913d79b859df1e
Zobrazit plný text záznamu
2
Akademický článek
Peculiarities of the formation and functioning of regional political elite in contemporary Ukraine
Autor: S. V. Rybalka
Publikováno v: Granì, Vol 18, Iss 8(124) (2015)
The article examines the principles of elit­creation at the regional level in accordance with the objectives and priorities of the national political science and the specificity of the domestic political process. Identified tendencies of the structu
Externí odkaz: https://doaj.org/article/105b3da48cd54d1caf1e14264a6d8d0a
Zobrazit plný text záznamu
5
Kinetic study of hydrogen-induced direct phase transformation in Y2Fe17 magnetic alloy on the basis of Kolmogorov’s model
Autor: S. B. Rybalka
Publikováno v: Philosophical Magazine Letters. 98:64-70
The kinetics of the hydrogen induced direct phase transformation in Y2Fe17 magnetic alloy has been analysed within the framework of Kolmogorov’s kinetic model. It is established that the transformation can be classified as a diffusion-controlled tr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::761b2bc0d14f547203d7b00f056367fe
https://doi.org/10.1080/09500839.2018.1468939
Zobrazit plný text záznamu
6
Study of characteristics of n-p-n type bipolar power transistor in small-sized metalpolymeric package type SOT-89
Autor: D A Knyaginin, E A Kulchenkov, S B Rybalka, A A Demidov
Publikováno v: Journal of Physics: Conference Series. 2086:012057
In this study the input, output and current gain characteristics of silicon n-p-n type medium power bipolar junction transistors KT242A91 made by the "GRUPPA KREMNY EL" in modern small-sized metalpolymeric package type (SOT-89) have been obtained. Th
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bd29e2e14b0a73b9da55c0e8733d8c07
https://doi.org/10.1088/1742-6596/2086/1/012057
Zobrazit plný text záznamu
7
Silicon carbide of 4H-SiC type Schottky diode current-voltage characteristics in small-sized type metal-polymeric package SOT-89
Autor: S V Sedykh, S B Rybalka, A A Demidov, E A Kulchenkov
Publikováno v: Journal of Physics: Conference Series. 2086:012065
The forward and reverse current–voltage characteristics of Ti/Al/4H-SiC Schottky diode type DDSH411A91 in modern small-sized (SOT-89) type metal-polymeric package have been obtained. In forward direction (current up to 2 A) on the basis of analysis
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c5b3473597c16c21434022401ac18f24
https://doi.org/10.1088/1742-6596/2086/1/012065
Zobrazit plný text záznamu
8
dV/dt testing of high voltage 4H-SiC Schottky diodes with different types of metal-polymeric packages
Autor: A. A. Demidov, E. A. Kulchenkov, S. B. Rybalka, A Yu Drakin, D A Knyginin, N A Zhemоedоv
Publikováno v: Journal of Physics: Conference Series. 1695:012160
The dV/dt values for 4H-SiC Schottky type diodes with different type packages have been determined experimentally. It is determined that experimental dV/dt values for 4H-SiC Schottky type diodes in metal-polymeric packages (SOT-89, QFN, PQFN, TO-220)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e23157460094062bf5c4c4f0c1259bb9
https://doi.org/10.1088/1742-6596/1695/1/012160
Zobrazit plný text záznamu
9
Test element for high voltage SiC Schottky diodes quality control
Autor: I V Kuftov, S. B. Rybalka, S V Sedykh, E. A. Kulchenkov, N A Bryukhno, A Yu Drakin, A. A. Demidov
Publikováno v: Journal of Physics: Conference Series. 1695:012153
The test element for quality control of SiC Schottky type high voltage diodes has been constructed at first in this study. It is shown that proposed test element give possibility for determination of important parameters for testing diode before Scho
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8a464f549846fce5c867fa2017856746
https://doi.org/10.1088/1742-6596/1695/1/012153
Zobrazit plný text záznamu
10
Determination of dV/dt and dI/dt characteristics for high voltage 4H-SiC Schottky diodes with different types of metal-polymeric packages
Autor: E. A. Kulchenkov, N. A. Zhemoedov, V. F. Zotin, O A Shishkina, S. B. Rybalka, A Yu Drakin, A. A. Demidov
Publikováno v: Journal of Physics: Conference Series. 1679:022045
The dV/dt and dI/dt characteristics for 4H-SiC Schottky type diodes with different type metal-polymeric packages have been studied experimentally. It is determined that experimental dV/dt values for 4H-SiC Schottky type diodes in large-sized and smal
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bfaa76c2e8e9413f244a5dfb6c45af61
https://doi.org/10.1088/1742-6596/1679/2/022045
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje